A novel pixel design for AM-OLED displays using nanocrystalline silicon TFTs

Chen Wei Lin*, Chia-Tso Chao, Yen Shih Huang

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    12 Scopus citations

    Abstract

    This paper presents a novel pixel design for active matrix organic light emitting diode (AM-OLED) displays using nanocrystalline silicon thin-film transistors (TFTs). The proposed pixel design can effectively reduce the variation of its stored display data caused by the leakage current of nanocrystalline silicon TFTs, which can in turn increase the contrast resolution of AM-OLED displays. With a proper setting of its capacitors, the proposed pixel design can achieve a 5.55× reduction on its display-data variation while requiring only a 1.15× write time when compared to the typical pixel design. The aperture ratio resulting from the layout of the proposed pixel design can also be maintained above 40%, which satisfies the specification of most AM-OLED displays. A series of simulations as well as measurement results are provided to validate the effectiveness of the proposed pixel design.

    Original languageEnglish
    Article number5428768
    Pages (from-to)939-952
    Number of pages14
    JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
    Volume19
    Issue number6
    DOIs
    StatePublished - 1 Jun 2011

    Keywords

    • Active Matrix Organic Light Emitting Diode (AM-OLED)
    • coupling effect
    • microcrystalline thin-film transistor (TFT)
    • nanocrystalline TFT

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