A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

L. C. Lin; E. R. Hsieh; T. C. Kao; M. Y. Lee; J. K. Chang; J. C. Guo; Steve S. Chung; T. P. Chen; S. A. Huang; T. J. Chen; O. Cheng

doi:10.1109/VLSI-TSA54299.2022.9770980

A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

L. C. Lin, E. R. Hsieh^*, T. C. Kao, M. Y. Lee, J. K. Chang, J. C. Guo, Steve S. Chung, T. P. Chen, S. A. Huang, T. J. Chen, O. Cheng

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.

Original language	English
Title of host publication	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9770980
State	Published - 2022
Event	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan Duration: 18 Apr 2022 → 21 Apr 2022

Publication series

Name	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/Territory	Taiwan
City	Hsinchu
Period	18/04/22 → 21/04/22

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Lin, L. C., Hsieh, E. R., Kao, T. C., Lee, M. Y., Chang, J. K., Guo, J. C., Chung, S. S., Chen, T. P., Huang, S. A., Chen, T. J., & Cheng, O. (2022). A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9770980

Lin, L. C. ; Hsieh, E. R. ; Kao, T. C. et al. / A Novel Physical Unclonable Function : NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

@inproceedings{f921dd6c468347feac830aad50948521,

title = "A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform",

abstract = "For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.",

author = "Lin, {L. C.} and Hsieh, {E. R.} and Kao, {T. C.} and Lee, {M. Y.} and Chang, {J. K.} and Guo, {J. C.} and Chung, {Steve S.} and Chen, {T. P.} and Huang, {S. A.} and Chen, {T. J.} and O. Cheng",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9770980",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

address = "美國",

}

Lin, LC, Hsieh, ER, Kao, TC, Lee, MY, Chang, JK, Guo, JC, Chung, SS, Chen, TP, Huang, SA, Chen, TJ & Cheng, O 2022, A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. in 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, Taiwan, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9770980

A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. / Lin, L. C.; Hsieh, E. R.; Kao, T. C. et al.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A Novel Physical Unclonable Function

T2 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

AU - Lin, L. C.

AU - Hsieh, E. R.

AU - Kao, T. C.

AU - Lee, M. Y.

AU - Chang, J. K.

AU - Guo, J. C.

AU - Chung, Steve S.

AU - Chen, T. P.

AU - Huang, S. A.

AU - Chen, T. J.

AU - Cheng, O.

PY - 2022

Y1 - 2022

N2 - For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.

AB - For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.

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U2 - 10.1109/VLSI-TSA54299.2022.9770980

DO - 10.1109/VLSI-TSA54299.2022.9770980

M3 - Conference contribution

AN - SCOPUS:85130506305

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 18 April 2022 through 21 April 2022

ER -

Lin LC, Hsieh ER, Kao TC, Lee MY, Chang JK, Guo JC et al. A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9770980

A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

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