A Novel Physical Unclonable Function: NBTI-PUF Realized by Random Trap Fluctuation (RTF) Enhanced True Randomness in 14 nm FinFET Platform

L. C. Lin, E. R. Hsieh*, T. C. Kao, M. Y. Lee, J. K. Chang, J. C. Guo, S. S. Chung, T. P. Chen, S. A. Huang, T. J. Chen, O. Cheng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

For the first time, the negative-bias-temperature-instability (NBTI) enhanced drain current variation in FinFET is used as an entropy source of the Physical Unclonable Function (PUF) to realize a new NBTI-PUF. The results show that the higher-temperature NBTI stress applied on the PUF, a much better security of the PUFs can be achieved, including 46% improvement of Inter Hamming Distance (HD), 71% improvement of Intra-HD, 40% improvement of Hamming Weight, and 15-fold-decrease of Bit-error-rate. Furthermore, the NBTI-PUFs have passed 13 items of NIST tests under 150°C.

Original languageEnglish
Title of host publication2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665409230
DOIs
StatePublished - 2022
Event2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan
Duration: 18 Apr 202221 Apr 2022

Publication series

Name2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/TerritoryTaiwan
CityHsinchu
Period18/04/2221/04/22

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