A novel nanoinjection lithography (NInL) technology and its application for 16-nm node device fabrication

Keyphrases

• Lithography Technology 100%
• Device Fabrication 100%
• Nanoinjection 100%
• Hard Mask 60%
• Electron Beam 40%
• Lithography 40%
• Dielectric 40%
• Memory Cell 40%
• Complementary Metal Oxide Semiconductor 40%
• Lithography Technique 40%
• Static Random Access Memory 40%
• Pattern Transfer 40%
• Dielectric Materials 20%
• Photoresist 20%
• Integrated Circuits 20%
• Circuit Design 20%
• Room Temperature 20%
• Transistor 20%
• High Density 20%
• Cell Area 20%
• Wafer Processing 20%
• Etching Process 20%
• Metal-oxide-semiconductor Devices 20%
• Photomask 20%
• Processing Cost 20%
• Device Design 20%
• Correction Method 20%
• Masking Scheme 20%
• Optical Lithography 20%
• Etching Mask 20%
• Low Volume 20%
• Precursor Gases 20%
• Semiconductor Technology 20%
• High Uniformity 20%
• Dielectric Deposition 20%
• Electron Beam Deposition 20%
• Technology Features 20%
• Metal Deposition 20%
• FinFET Structure 20%
• Process Module 20%
• Direct Ink Writing 20%
• Creation Process 20%
• Low-cost Manufacturing 20%
• Proximity Correction 20%
• Line Width Roughness 20%
• Organometallic Precursors 20%
• Low Variability 20%
• 3-sigma 20%
• Pattern Creation 20%
• Early Access 20%
• Metal Pattern 20%

Engineering

• Nodes 100%
• Lithography 100%
• Dielectrics 80%
• Random Access Memory 40%
• Pattern Transfer 40%
• Feature Size 20%
• Simplifies 20%
• Photoresist 20%
• Interconnects 20%
• Circuit Design 20%
• Room Temperature 20%
• Cell Area 20%
• Complementary Metal-Oxide-Semiconductor 20%
• Proximity Effect 20%
• Optical Lithography 20%
• Etching Process 20%
• Assisted Deposition 20%
• Complementary Metal-Oxide-Semiconductor Device 20%
• Processing Cost 20%
• Integrated Circuit 20%

Material Science

• Lithography 100%
• Device Fabrication 100%
• Dielectric Material 66%
• Electronic Circuit 50%
• Complementary Metal-Oxide-Semiconductor Device 33%
• Density 16%
• Transistor 16%
• Conductor 16%
• Linewidth 16%