A novel method for growing polycrystalline Ge layer by using UHVCVD

Chun Hao Tu*, Ting Chang Chang, Po-Tsun Liu, Tsung Hsi Yang, Hsiao-Wen Zan, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Poly-Ge grown on SiO2 substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 °C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO2 substrates at low growth temperature. SEM image presents the films with uniform grain size and uniform thickness occurring in the samples. The grain size of poly-Ge is about 100 nm. The Raman shift spectrum and XRD spectrum also identified that films are high quality poly-Ge by using this method.

Original languageEnglish
Pages (from-to)3261-3264
Number of pages4
JournalSurface and Coatings Technology
Issue number10 SPEC. ISS.
StatePublished - 24 Feb 2006


  • Germanium
  • Polycrystalline


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