A novel method for growing polycrystalline Ge layer by using UHVCVD

Chun Hao Tu; Ting Chang Chang; Po-Tsun Liu; Tsung Hsi Yang; Hsiao-Wen Zan; Chun Yen Chang

doi:10.1016/j.surfcoat.2005.07.026

A novel method for growing polycrystalline Ge layer by using UHVCVD

Chun Hao Tu^*, Ting Chang Chang, Po-Tsun Liu, Tsung Hsi Yang, Hsiao-Wen Zan, Chun Yen Chang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Poly-Ge grown on SiO₂ substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 °C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO₂ substrates at low growth temperature. SEM image presents the films with uniform grain size and uniform thickness occurring in the samples. The grain size of poly-Ge is about 100 nm. The Raman shift spectrum and XRD spectrum also identified that films are high quality poly-Ge by using this method.

Original language	English
Pages (from-to)	3261-3264
Number of pages	4
Journal	Surface and Coatings Technology
Volume	200
Issue number	10 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2005.07.026
State	Published - 24 Feb 2006

Keywords

Germanium
Polycrystalline
UHVCVD

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10.1016/j.surfcoat.2005.07.026

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@article{83ff6c0d033144d985dc24970d1e17a0,

title = "A novel method for growing polycrystalline Ge layer by using UHVCVD",

abstract = "Poly-Ge grown on SiO2 substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 °C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO2 substrates at low growth temperature. SEM image presents the films with uniform grain size and uniform thickness occurring in the samples. The grain size of poly-Ge is about 100 nm. The Raman shift spectrum and XRD spectrum also identified that films are high quality poly-Ge by using this method.",

keywords = "Germanium, Polycrystalline, UHVCVD",

author = "Tu, {Chun Hao} and Chang, {Ting Chang} and Po-Tsun Liu and Yang, {Tsung Hsi} and Hsiao-Wen Zan and Chang, {Chun Yen}",

year = "2006",

month = feb,

day = "24",

doi = "10.1016/j.surfcoat.2005.07.026",

language = "English",

volume = "200",

pages = "3261--3264",

journal = "Surface and Coatings Technology",

issn = "0257-8972",

publisher = "Elsevier B.V.",

number = "10 SPEC. ISS.",

}

TY - JOUR

T1 - A novel method for growing polycrystalline Ge layer by using UHVCVD

AU - Tu, Chun Hao

AU - Chang, Ting Chang

AU - Liu, Po-Tsun

AU - Yang, Tsung Hsi

AU - Zan, Hsiao-Wen

AU - Chang, Chun Yen

PY - 2006/2/24

Y1 - 2006/2/24

N2 - Poly-Ge grown on SiO2 substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 °C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO2 substrates at low growth temperature. SEM image presents the films with uniform grain size and uniform thickness occurring in the samples. The grain size of poly-Ge is about 100 nm. The Raman shift spectrum and XRD spectrum also identified that films are high quality poly-Ge by using this method.

AB - Poly-Ge grown on SiO2 substrates by using one-step ultra-high vacuum chemical vapor deposition (UHVCVD) process with thin Si nucleation layers at very low deposition temperature (350 °C) was demonstrated. The results demonstrated that the polycrystalline silicon (poly-Si) nucleation layer is needed for the growth of polycrystalline germanium (poly-Ge) on SiO2 substrates at low growth temperature. SEM image presents the films with uniform grain size and uniform thickness occurring in the samples. The grain size of poly-Ge is about 100 nm. The Raman shift spectrum and XRD spectrum also identified that films are high quality poly-Ge by using this method.

KW - Germanium

KW - Polycrystalline

KW - UHVCVD

UR - http://www.scopus.com/inward/record.url?scp=31644436763&partnerID=8YFLogxK

U2 - 10.1016/j.surfcoat.2005.07.026

DO - 10.1016/j.surfcoat.2005.07.026

M3 - Article

AN - SCOPUS:31644436763

SN - 0257-8972

VL - 200

SP - 3261

EP - 3264

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

IS - 10 SPEC. ISS.

ER -

A novel method for growing polycrystalline Ge layer by using UHVCVD

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Keywords

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