In this study, Cu-Cu direct bonding at the ultra-low bonding temperature has been successfully demonstrated by using the Cr/Au layer, which can protect Cu from oxidation before the thermocompression bonding (TCB) process and greatly improve the diffusion of Cu atoms into the surface during the thermal process. The bonding quality has been carefully investigated by analyzing Auger depth, observing the SAT, AFM, SEM images, and measuring electrical performance of the samples. In addition, the mechanical test and reliability test have been performed to verify the reliability of the novel structure with the Cr/Au layer in this study.
|Title of host publication
|Proceedings - IEEE 70th Electronic Components and Technology Conference, ECTC 2020
|Institute of Electrical and Electronics Engineers Inc.
|Number of pages
|Published - Jun 2020
|70th IEEE Electronic Components and Technology Conference, ECTC 2020 - Orlando, United States
Duration: 3 Jun 2020 → 30 Jun 2020
|Proceedings - Electronic Components and Technology Conference
|70th IEEE Electronic Components and Technology Conference, ECTC 2020
|3/06/20 → 30/06/20
- 3D IC
- low temperature