A Novel Leakage Current Separation Technique in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell

Steve S. Chung*, P. Y. Chiang, George Chou, C. T. Huang, Paul Chen, C. H. Chu, Charles C.H. Hsu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

20 Scopus citations

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Engineering & Materials Science

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