A novel LC-tank ESD protection design for giga-Hz RF circuits

Ming-Dou Ker*, Chien I. Chou, Chien Ming Lee

*Corresponding author for this work

    Research output: Contribution to conferencePaperpeer-review

    30 Scopus citations

    Abstract

    To further decrease the power gain loss and noise figure of RF LNA circuit from the on-chip ESD protection circuit. A novel LC-tank RF ESD protection circuits is proposed in this paper and has been successfully verified in a 0.25-μm CMOS process with top thick metal. With the resonance of LC-tank, the LC-tank RF ESD protection circuit can reduce the power gain loss and noise figure at the operation frequency from ESD device. From the experimental results, the 4.5 circles inductor of LC-tank is the best choice for the requirement of 2kV HBM ESD level. The proposed LC-tank ESD protection circuit will be one of the most effective ESD protection solutions for RF circuits in higher frequency band (>10GHz).

    Original languageEnglish
    Pages115-118
    Number of pages4
    DOIs
    StatePublished - Jun 2003
    Event2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Philadelphia, PA, United States
    Duration: 8 Jun 200310 Jun 2003

    Conference

    Conference2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
    Country/TerritoryUnited States
    CityPhiladelphia, PA
    Period8/06/0310/06/03

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