A novel LC-tank ESD protection design for giga-Hz RF circuits

Ming-Dou Ker; Chien I. Chou; Chien Ming Lee

doi:10.1109/RFIC.2003.1213906

A novel LC-tank ESD protection design for giga-Hz RF circuits

Ming-Dou Ker^*, Chien I. Chou, Chien Ming Lee

^*Corresponding author for this work

Research output: Contribution to conference › Paper › peer-review

33 Scopus citations

Abstract

To further decrease the power gain loss and noise figure of RF LNA circuit from the on-chip ESD protection circuit. A novel LC-tank RF ESD protection circuits is proposed in this paper and has been successfully verified in a 0.25-μm CMOS process with top thick metal. With the resonance of LC-tank, the LC-tank RF ESD protection circuit can reduce the power gain loss and noise figure at the operation frequency from ESD device. From the experimental results, the 4.5 circles inductor of LC-tank is the best choice for the requirement of 2kV HBM ESD level. The proposed LC-tank ESD protection circuit will be one of the most effective ESD protection solutions for RF circuits in higher frequency band (>10GHz).

Original language	English
Pages	115-118
Number of pages	4
DOIs	https://doi.org/10.1109/RFIC.2003.1213906
State	Published - Jun 2003
Event	2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Philadelphia, PA, United States Duration: 8 Jun 2003 → 10 Jun 2003

Conference

Conference	2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Philadelphia, PA
Period	8/06/03 → 10/06/03

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10.1109/RFIC.2003.1213906

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title = "A novel LC-tank ESD protection design for giga-Hz RF circuits",

abstract = "To further decrease the power gain loss and noise figure of RF LNA circuit from the on-chip ESD protection circuit. A novel LC-tank RF ESD protection circuits is proposed in this paper and has been successfully verified in a 0.25-μm CMOS process with top thick metal. With the resonance of LC-tank, the LC-tank RF ESD protection circuit can reduce the power gain loss and noise figure at the operation frequency from ESD device. From the experimental results, the 4.5 circles inductor of LC-tank is the best choice for the requirement of 2kV HBM ESD level. The proposed LC-tank ESD protection circuit will be one of the most effective ESD protection solutions for RF circuits in higher frequency band (>10GHz).",

author = "Ming-Dou Ker and Chou, {Chien I.} and Lee, {Chien Ming}",

year = "2003",

month = jun,

doi = "10.1109/RFIC.2003.1213906",

language = "English",

pages = "115--118",

note = "2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 08-06-2003 Through 10-06-2003",

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TY - CONF

T1 - A novel LC-tank ESD protection design for giga-Hz RF circuits

AU - Ker, Ming-Dou

AU - Chou, Chien I.

AU - Lee, Chien Ming

PY - 2003/6

Y1 - 2003/6

N2 - To further decrease the power gain loss and noise figure of RF LNA circuit from the on-chip ESD protection circuit. A novel LC-tank RF ESD protection circuits is proposed in this paper and has been successfully verified in a 0.25-μm CMOS process with top thick metal. With the resonance of LC-tank, the LC-tank RF ESD protection circuit can reduce the power gain loss and noise figure at the operation frequency from ESD device. From the experimental results, the 4.5 circles inductor of LC-tank is the best choice for the requirement of 2kV HBM ESD level. The proposed LC-tank ESD protection circuit will be one of the most effective ESD protection solutions for RF circuits in higher frequency band (>10GHz).

AB - To further decrease the power gain loss and noise figure of RF LNA circuit from the on-chip ESD protection circuit. A novel LC-tank RF ESD protection circuits is proposed in this paper and has been successfully verified in a 0.25-μm CMOS process with top thick metal. With the resonance of LC-tank, the LC-tank RF ESD protection circuit can reduce the power gain loss and noise figure at the operation frequency from ESD device. From the experimental results, the 4.5 circles inductor of LC-tank is the best choice for the requirement of 2kV HBM ESD level. The proposed LC-tank ESD protection circuit will be one of the most effective ESD protection solutions for RF circuits in higher frequency band (>10GHz).

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U2 - 10.1109/RFIC.2003.1213906

DO - 10.1109/RFIC.2003.1213906

M3 - Paper

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SP - 115

EP - 118

T2 - 2003 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 8 June 2003 through 10 June 2003

ER -

A novel LC-tank ESD protection design for giga-Hz RF circuits

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