A novel implantless MOS thin-film transistor with simple processing, excellent performance and ambipolar operation capability

Horng-Chih Lin, C. Y. Lin, K. L. Yeh, R. G. Huang, M. F. Wang, C. M. Yu, T. Y. Huang, S. M. Sze

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

A novel thin film transistor (TFT) capable of ambipolar operation is demonstrated. The field induced source drain region supplies abundant channel carriers during on-state. On the other hand, the region reduces off-state leakage. The suggested device structure and fabrication is advantageous in making the overall process simple and suitable for low temperature manufacturing. The ambipolar mode with superior characteristic is demonstrated.

Original languageEnglish
Pages (from-to)857-859
Number of pages3
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 2000

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