@inproceedings{7ba9fd96f43b41d88865505cac796b76,
title = "A Novel Gate Driver with Charge Sharing Technique to Optimize Gate Turn-On/Turn-Off Overshoot and Switching Loss Trade-off in SiC Power MOSFETs",
abstract = "This paper proposes a charge sharing approach to optimize gate turn-on/turn-off overshoot and switching loss trade-off in SiC Power MOSFETs. The proposed technique achieves significant reductions in overshoot ratios while maintaining similar switching losses compared to conventional methods. Specifically, the proposed technique reduces turn-off overshoot ratio by 57% with only a 30% increase in turn-off switching loss ( E off) and turn-on overshoot ratio by 39% with only a 27% increase in turn-on switching loss ( E on). Moreover, when driving modules with large input capacitance ( C\mathfrak{moduIe), the charge sharing method decreases overshoot ratio by 38% during turn-off and by 23% during turn-on, with minimal impact on switching loss. The results show that using the charge sharing technique can improve the performance of SiC power MOSFETs in power electronics applications.",
keywords = "Gate driver, SiC MOSFETs, Switching Loss",
author = "Hsiao, {Yu Sheng} and Yu, {Wei Chen} and Cheng Sung and Lin, {Wei Cheng} and Hsiao, {Yi Kai} and Hung, {Chia Lung} and Huang, {Zhen Hong} and Kuo, {Hao Chung} and Tu, {Chang Ching} and Wu, {Tian Li}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 ; Conference date: 02-06-2024 Through 06-06-2024",
year = "2024",
doi = "10.1109/ISPSD59661.2024.10579570",
language = "English",
series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "184--187",
booktitle = "2024 36th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2024 - Conference Proceedings",
address = "美國",
}