A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

You Chen Weng, Yueh Chin Lin, Heng Tung Hsu, Min Lu Kao, Hsuan Yao Huang, Daisuke Ueda, Minh Thien Huu Ha, Chih Yi Yang, Jer Shen Maa, Edward Yi Chang*, Chang Fu Dee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


An AlGaN/GaN/Si high electron mobility transistor (HEMT) using a GaN:C buffer with a 2 nm AlGaN electron-blocking layer (EBL) is investigated for the first time for millimeter-wave appli-cations. Compared with the double heterostructure field effect transistor (DHFET), the AlGaN/GaN HEMT with the GaN:C/EBL buffer has a lower vertical leakage, higher thermal stability, and better RF performance. In addition, AlGaN EBL can prevent carbon-related traps from GaN:C and improve electron confinement in 2DEG during high-frequency operation. Finally, a Pout of 31.2 dBm with PAE of 21.7% were measured at 28 GHz at 28 V. These results demonstrated the great potential of HEMTs using GaN:C with AlGaN EBL epitaxy technology for millimeter-wave applications.

Original languageEnglish
Article number703
Pages (from-to)1-10
Number of pages10
Issue number3
StatePublished - 1 Feb 2022


  • Electron-blocking layer
  • GaN
  • HEMT


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