A novel four-mask-step low-temperature polysilicon thin-film transistor with self-aligned raised source/drain (SARSD)

Kow-Ming Chang*, Gin Min Lin, Cheng Guo Chen, Mon Fan Hsieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

In this letter, a novel structure of polycrystalline-silicon thin-film transistors (TFTs) with self-aligned raised source/drain (SARSD) and a thin channel has been developed and investigated. In the proposed structure, a thick SD and a thin active region could be achieved with only four mask steps, which are less than that in conventional raised SD TFTs. The proposed SARSD TFT has a higher ON-state current and a lower OFF-state leakage current. Moreover, the ON/OFF current ratio of the proposed SARSD TFT is also higher than that of a conventional coplanar TFT.

Original languageEnglish
Pages (from-to)39-41
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number1
DOIs
StatePublished - 1 Jan 2007

Keywords

  • Four masks
  • ON/OFF current ratio
  • Polycrystalline-silicon thin-film transistor (poly-Si TFT)
  • Self-aligned raised source/drain (SARSD)
  • Thin channel

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