A novel dilute antimony channel In0.2Ga0.8AsSb/ GaAs HEMT

Ke Hua Su; Wei Chou Hsu; Ching Sung Lee; Tsung Yeh Wu; Yue Han Wu; Li Chang; Ru Shang Hsiao; Jenn-Fang Chen; Wei Chi Chi

doi:10.1109/LED.2006.889047

A novel dilute antimony channel In_0.2Ga_0.8AsSb/ GaAs HEMT

Ke Hua Su^*, Wei Chou Hsu, Ching Sung Lee, Tsung Yeh Wu, Yue Han Wu, Li Chang, Ru Shang Hsiao, Jenn-Fang Chen, Wei Chi Chi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

This letter reports, for the first time, a high-electron mobility transistor (HEMT) using a dilute antimony In_0.2 Ga_0.8AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance g_m,max of 227 (180) mS/mm, a drain saturation current density I_DSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency f_T of 25 (20.6) GHz, and the maximum oscillation frequency f_max of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2 × 200 μm².

Original language	English
Article number	4068971
Pages (from-to)	96-99
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	28
Issue number	2
DOIs	https://doi.org/10.1109/LED.2006.889047
State	Published - 1 Feb 2007

Keywords

Dilute channel
InGaAsSb/GaAs high-electron mobility transistor (HEMT)
Surfactant

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10.1109/LED.2006.889047

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title = "A novel dilute antimony channel In0.2Ga0.8AsSb/ GaAs HEMT",

abstract = "This letter reports, for the first time, a high-electron mobility transistor (HEMT) using a dilute antimony In0.2 Ga0.8AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance gm,max of 227 (180) mS/mm, a drain saturation current density IDSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency fT of 25 (20.6) GHz, and the maximum oscillation frequency fmax of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2 × 200 μm2.",

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author = "Su, {Ke Hua} and Hsu, {Wei Chou} and Lee, {Ching Sung} and Wu, {Tsung Yeh} and Wu, {Yue Han} and Li Chang and Hsiao, {Ru Shang} and Jenn-Fang Chen and Chi, {Wei Chi}",

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T1 - A novel dilute antimony channel In0.2Ga0.8AsSb/ GaAs HEMT

AU - Su, Ke Hua

AU - Hsu, Wei Chou

AU - Lee, Ching Sung

AU - Wu, Tsung Yeh

AU - Wu, Yue Han

AU - Chang, Li

AU - Hsiao, Ru Shang

AU - Chen, Jenn-Fang

AU - Chi, Wei Chi

PY - 2007/2/1

Y1 - 2007/2/1

N2 - This letter reports, for the first time, a high-electron mobility transistor (HEMT) using a dilute antimony In0.2 Ga0.8AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance gm,max of 227 (180) mS/mm, a drain saturation current density IDSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency fT of 25 (20.6) GHz, and the maximum oscillation frequency fmax of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2 × 200 μm2.

AB - This letter reports, for the first time, a high-electron mobility transistor (HEMT) using a dilute antimony In0.2 Ga0.8AsSb channel, which is grown by a molecular-beam epitaxy system. The interfacial quality within the InGaAsSb/GaAs quantum well of the HEMT device was effectively improved by introducing the surfactantlike Sb atoms during the growth of the InGaAs layer. The improved heterostructural quality and electron transport properties have also been verified by various surface characterization techniques. In comparison, the proposed HEMT with (without) the incorporation of Sb atoms has demonstrated the maximum extrinsic transconductance gm,max of 227 (180) mS/mm, a drain saturation current density IDSS of 218 (170) mA/mm, a gate-voltage swing of 1.215 (1.15) V, a cutoff frequency fT of 25 (20.6) GHz, and the maximum oscillation frequency fmax of 28.3 (25.6) GHz at 300 K with gate dimensions of 1.2 × 200 μm2.

KW - Dilute channel

KW - InGaAsSb/GaAs high-electron mobility transistor (HEMT)

KW - Surfactant

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DO - 10.1109/LED.2006.889047

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ER -

A novel dilute antimony channel In_0.2Ga_0.8AsSb/ GaAs HEMT

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