A novel design of ferroelectric nanowire tunnel field effect transistors

Narasimhulu Thoti, Yi-Ming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report for the first time a novel structure of tunneling field-effect transistors (TFETs) with ferroelectric and nanowire concepts. The device is modeled carefully to utilize the benefits of ferroelectrics through metal-ferroelectric by enhancing the internal voltage across the ferroelectric region. The physical behavior of proposed design is analyzed for the improvement of device performance in comparison to the nominal ferroelectric-insulator TFET structure. The proposed design is capable in delivering impressive figures in Ion as 212 μA/μm. reasonable Ioff together with steep subthreshold swing of 33.3 mV/dec.

Original languageEnglish
Title of host publicationVLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665419345
DOIs
StatePublished - 19 Apr 2021
Event2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021 - Hsinchu, Taiwan
Duration: 19 Apr 202122 Apr 2021

Publication series

NameVLSI-TSA 2021 - 2021 International Symposium on VLSI Technology, Systems and Applications, Proceedings

Conference

Conference2021 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2021
Country/TerritoryTaiwan
CityHsinchu
Period19/04/2122/04/21

Fingerprint

Dive into the research topics of 'A novel design of ferroelectric nanowire tunnel field effect transistors'. Together they form a unique fingerprint.

Cite this