A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics

Nai Chao Su; Shui Jinn Wang; Albert Chin

doi:10.1109/LED.2009.2037986

A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics

Nai Chao Su^*
, Shui Jinn Wang
, Albert Chin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-μs speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-κlayers.

Original language	English
Article number	5378649
Pages (from-to)	201-203
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	31
Issue number	3
DOIs	https://doi.org/10.1109/LED.2009.2037986
State	Published - Mar 2010

Keywords

Charge-trapping-engineered Flash (CTEF)
High-ê
InGaZnO
Metal-oxide-nitride-oxide-semiconductor (MONOS)
Nonvolatile memory (NVM)

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10.1109/LED.2009.2037986

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title = "A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics",

abstract = "We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-μs speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-κlayers.",

keywords = "Charge-trapping-engineered Flash (CTEF), High-{\^e}, InGaZnO, Metal-oxide-nitride-oxide-semiconductor (MONOS), Nonvolatile memory (NVM)",

author = "Su, \{Nai Chao\} and Wang, \{Shui Jinn\} and Albert Chin",

year = "2010",

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doi = "10.1109/LED.2009.2037986",

language = "English",

volume = "31",

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T1 - A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics

AU - Su, Nai Chao

AU - Wang, Shui Jinn

AU - Chin, Albert

PY - 2010/3

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N2 - We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-μs speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-κlayers.

AB - We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-μs speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-κlayers.

KW - Charge-trapping-engineered Flash (CTEF)

KW - High-ê

KW - InGaZnO

KW - Metal-oxide-nitride-oxide-semiconductor (MONOS)

KW - Nonvolatile memory (NVM)

UR - https://www.scopus.com/pages/publications/77649153796

U2 - 10.1109/LED.2009.2037986

DO - 10.1109/LED.2009.2037986

M3 - Article

AN - SCOPUS:77649153796

SN - 0741-3106

VL - 31

SP - 201

EP - 203

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 3

M1 - 5378649

ER -

A nonvolatile InGaZnO charge-trapping-engineered flash memory with good retention characteristics

Abstract

Keywords

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