A NiSi salicide technology for advanced logic devices

T. Morimoto, H. S. Momose, T. Iinuma, I. Kunishima, K. Suguro, H. Okana, I. Katakabe, H. Nakajima, M. Tsuchiaki, M. Ono, Y. Katsumata, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

66 Scopus citations


A nickel-silicide (NiSi) technology for deep submicron devices has been developed. It was confirmed that Ni films sputtered on n- and p-single and polysilicon can be changed to mono-silicide (NiSi) stably at low temperature (600 degrees C) over a short period without any agglomeration. The NiSi layer did not absorb boron or arsenic atoms during silicidation, and a high concentration of boron or arsenic was achieved at the silicide/silicon interface, contributing to a low contact resistance. NiSi technology was applied to a dual-gate CMOS structure. Excellent pn junction characteristics and high drivabilities of both the n- and p-MOSFETs were successfully obtained.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting 1991, IEDM 1991
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Electronic)0780302435
StatePublished - 1991
EventInternational Electron Devices Meeting, IEDM 1991 - Washington, United States
Duration: 8 Dec 199111 Dec 1991

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918


ConferenceInternational Electron Devices Meeting, IEDM 1991
Country/TerritoryUnited States


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