A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs

William P.N. Chen; Pin Su; J. S. Wang; C. H. Lien; C. H. Chang; K. Goto; C. H. Diaz

doi:10.1109/VTSA.2006.251104

A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs

William P.N. Chen^*, Pin Su, J. S. Wang, C. H. Lien, C. H. Chang, K. Goto, C. H. Diaz

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Original language	English
Title of host publication	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
Pages	143-144
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2006.251104
State	Published - 1 Dec 2006
Event	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan Duration: 24 Apr 2006 → 26 Apr 2006

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
Country/Territory	Taiwan
City	Hsinchu
Period	24/04/06 → 26/04/06

Access to Document

10.1109/VTSA.2006.251104

Cite this

Chen, W. P. N., Su, P., Wang, J. S., Lien, C. H., Chang, C. H., Goto, K., & Diaz, C. H. (2006). A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (pp. 143-144). Article 4016640 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2006.251104

@inproceedings{f7d11fda37eb45249bd2ff2052fc02af,

title = "A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs",

author = "Chen, {William P.N.} and Pin Su and Wang, {J. S.} and Lien, {C. H.} and Chang, {C. H.} and K. Goto and Diaz, {C. H.}",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/VTSA.2006.251104",

language = "English",

isbn = "142440181X",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "143--144",

booktitle = "2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA ; Conference date: 24-04-2006 Through 26-04-2006",

}

Chen, WPN, Su, P, Wang, JS, Lien, CH, Chang, CH, Goto, K & Diaz, CH 2006, A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs. in 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers., 4016640, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 143-144, 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA, Hsinchu, Taiwan, 24/04/06. https://doi.org/10.1109/VTSA.2006.251104

A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs. / Chen, William P.N.; Su, Pin; Wang, J. S. et al.
2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. 2006. p. 143-144 4016640 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs

AU - Chen, William P.N.

AU - Su, Pin

AU - Wang, J. S.

AU - Lien, C. H.

AU - Chang, C. H.

AU - Goto, K.

AU - Diaz, C. H.

PY - 2006/12/1

Y1 - 2006/12/1

UR - http://www.scopus.com/inward/record.url?scp=34047240287&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2006.251104

DO - 10.1109/VTSA.2006.251104

M3 - Conference contribution

AN - SCOPUS:34047240287

SN - 142440181X

SN - 9781424401819

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 143

EP - 144

BT - 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers

T2 - 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA

Y2 - 24 April 2006 through 26 April 2006

ER -

Chen WPN, Su P, Wang JS, Lien CH, Chang CH, Goto K et al. A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. 2006. p. 143-144. 4016640. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2006.251104

A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs

Publication series

Conference

Access to Document

Other files and links

Cite this