A new self-aligned contact technology for III-V MOSFETs

Huaxin Guo; Xingui Zhang; Hock Chun Chin; Xiao Gong; Shao Ming Koh; Chunlei Zhan; Guang Li Luo; Chun Yen Chang; Hau Yu Lin; Chao-Hsin Chien; Zong You Han; Shih Chiang Huang; Chao Ching Cheng; Chih Hsin Ko; Clement H. Wann; Yee Chia Yeo

doi:10.1109/VTSA.2010.5488907

A new self-aligned contact technology for III-V MOSFETs

Huaxin Guo^*, Xingui Zhang, Hock Chun Chin, Xiao Gong, Shao Ming Koh, Chunlei Zhan, Guang Li Luo, Chun Yen Chang, Hau Yu Lin, Chao-Hsin Chien, Zong You Han, Shih Chiang Huang, Chao Ching Cheng, Chih Hsin Ko, Clement H. Wann, Yee Chia Yeo

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n⁺ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.

Original language	English
Title of host publication	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Pages	152-153
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2010.5488907
State	Published - 2010
Event	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan Duration: 26 Apr 2010 → 28 Apr 2010

Publication series

Name	Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Conference

Conference	2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
Country/Territory	Taiwan
City	Hsin Chu
Period	26/04/10 → 28/04/10

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10.1109/VTSA.2010.5488907

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Guo, H., Zhang, X., Chin, H. C., Gong, X., Koh, S. M., Zhan, C., Luo, G. L., Chang, C. Y., Lin, H. Y., Chien, C.-H., Han, Z. Y., Huang, S. C., Cheng, C. C., Ko, C. H., Wann, C. H., & Yeo, Y. C. (2010). A new self-aligned contact technology for III-V MOSFETs. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 (pp. 152-153). Article 5488907 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). https://doi.org/10.1109/VTSA.2010.5488907

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title = "A new self-aligned contact technology for III-V MOSFETs",

abstract = "We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n+ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.",

author = "Huaxin Guo and Xingui Zhang and Chin, {Hock Chun} and Xiao Gong and Koh, {Shao Ming} and Chunlei Zhan and Luo, {Guang Li} and Chang, {Chun Yen} and Lin, {Hau Yu} and Chao-Hsin Chien and Han, {Zong You} and Huang, {Shih Chiang} and Cheng, {Chao Ching} and Ko, {Chih Hsin} and Wann, {Clement H.} and Yeo, {Yee Chia}",

year = "2010",

doi = "10.1109/VTSA.2010.5488907",

language = "English",

isbn = "9781424450633",

series = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

pages = "152--153",

booktitle = "Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010",

note = "2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 ; Conference date: 26-04-2010 Through 28-04-2010",

}

Guo, H, Zhang, X, Chin, HC, Gong, X, Koh, SM, Zhan, C, Luo, GL, Chang, CY, Lin, HY, Chien, C-H, Han, ZY, Huang, SC, Cheng, CC, Ko, CH, Wann, CH & Yeo, YC 2010, A new self-aligned contact technology for III-V MOSFETs. in Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010., 5488907, Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, pp. 152-153, 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010, Hsin Chu, Taiwan, 26/04/10. https://doi.org/10.1109/VTSA.2010.5488907

A new self-aligned contact technology for III-V MOSFETs. / Guo, Huaxin; Zhang, Xingui; Chin, Hock Chun et al.
Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 152-153 5488907 (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A new self-aligned contact technology for III-V MOSFETs

AU - Guo, Huaxin

AU - Zhang, Xingui

AU - Chin, Hock Chun

AU - Gong, Xiao

AU - Koh, Shao Ming

AU - Zhan, Chunlei

AU - Luo, Guang Li

AU - Chang, Chun Yen

AU - Lin, Hau Yu

AU - Chien, Chao-Hsin

AU - Han, Zong You

AU - Huang, Shih Chiang

AU - Cheng, Chao Ching

AU - Ko, Chih Hsin

AU - Wann, Clement H.

AU - Yeo, Yee Chia

PY - 2010

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N2 - We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n+ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.

AB - We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n+ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.

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T3 - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

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BT - Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

T2 - 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

Y2 - 26 April 2010 through 28 April 2010

ER -

Guo H, Zhang X, Chin HC, Gong X, Koh SM, Zhan C et al. A new self-aligned contact technology for III-V MOSFETs. In Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010. 2010. p. 152-153. 5488907. (Proceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010). doi: 10.1109/VTSA.2010.5488907

A new self-aligned contact technology for III-V MOSFETs

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