A new self-aligned contact technology for III-V MOSFETs

Huaxin Guo*, Xingui Zhang, Hock Chun Chin, Xiao Gong, Shao Ming Koh, Chunlei Zhan, Guang Li Luo, Chun Yen Chang, Hau Yu Lin, Chao-Hsin Chien, Zong You Han, Shih Chiang Huang, Chao Ching Cheng, Chih Hsin Ko, Clement H. Wann, Yee Chia Yeo

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    10 Scopus citations

    Abstract

    We report the first demonstration of a self-aligned contact technology for III-V MOSFETs. A novel epitaxy process with in-situ surface treatment was developed to selectively form a thin continuous germanium-silicon (GeSi) layer on gallium arsenide (GaAs) source and drain (S/D) regions. By precisely and fully converting the GeSi layer into NiGeSi, while diffusing Ge and Si into GaAs to form heavily n+ doped regions, a novel self-aligned nickel germanosilicide (NiGeSi) ohmic contact was achieved. This is expected to significantly enhance the performance of III-V MOSFETs.

    Original languageEnglish
    Title of host publicationProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
    Pages152-153
    Number of pages2
    DOIs
    StatePublished - 20 Oct 2010
    Event2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010 - Hsin Chu, Taiwan
    Duration: 26 Apr 201028 Apr 2010

    Publication series

    NameProceedings of 2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010

    Conference

    Conference2010 International Symposium on VLSI Technology, System and Application, VLSI-TSA 2010
    Country/TerritoryTaiwan
    CityHsin Chu
    Period26/04/1028/04/10

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