A new Schmitt trigger circuit in A 0.13 μm 1/2.5 V CMOS process to receive 3.3 V input signals

Shih Lun Chen*, Ming-Dou Ker

*Corresponding author for this work

    Research output: Contribution to journalConference articlepeer-review

    7 Scopus citations

    Abstract

    A new Schmitt trigger circuit, which consists of low-voltage devices, can receive the high-voltage signal without gate-oxide reliability problem, is proposed. The new proposed circuit, which can operate in a 3.3 V signal environment without suffering high-voltage gate-oxide stress, has been fabricated in a 0.13 μm 1/2.5 V CMOS process. The experimental results show that the measured transition threshold voltages of the new proposed Schmitt trigger circuit are about 1 V and 2.5 V, respectively. The proposed Schmitt trigger circuit is suitable for mixed-voltage I/O interfaces circuit to receive the input signals and reject the input noise.

    Original languageEnglish
    Pages (from-to)II573-II576
    JournalProceedings - IEEE International Symposium on Circuits and Systems
    Volume2
    DOIs
    StatePublished - 2004
    Event2004 IEEE International Symposium on Cirquits and Systems - Proceedings - Vancouver, BC, Canada
    Duration: 23 May 200426 May 2004

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