A new process to improve the performance of 850 nm wavelength GaAs VCSELs

Wen Jang Jiang; Lung Chien Chen; Meng Chyi Wu; Hsin-Chieh Yu; Hung Pin Yang; Chia Pin Sung; Jim Yong Chi; Chun Yuan Huang; Yi Tsuo Wu

doi:10.1016/S0038-1101(02)00189-2

A new process to improve the performance of 850 nm wavelength GaAs VCSELs

Wen Jang Jiang, Lung Chien Chen, Meng Chyi Wu, Hsin-Chieh Yu, Hung Pin Yang, Chia Pin Sung, Jim Yong Chi, Chun Yuan Huang, Yi Tsuo Wu^*

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

In this article, we propose a new process method to improve the light output power of GaAs vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with filling Al metal into the ring trench will exhibit a higher quantum efficiency and have a light output power of 1.45 times higher than those without filling Al. In addition, the trench filled with Al metal can benefit in the bonding process and behavior as a mirror to reduce the output power loss. These VCSELs show good output characteristics and high-temperature operation.

Original language	English
Pages (from-to)	2287-2289
Number of pages	3
Journal	Solid-State Electronics
Volume	46
Issue number	12
DOIs	https://doi.org/10.1016/S0038-1101(02)00189-2
State	Published - Dec 2002

Keywords

Trench filling
Vertical-cavity surface-emitting lasers

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10.1016/S0038-1101(02)00189-2

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title = "A new process to improve the performance of 850 nm wavelength GaAs VCSELs",

abstract = "In this article, we propose a new process method to improve the light output power of GaAs vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with filling Al metal into the ring trench will exhibit a higher quantum efficiency and have a light output power of 1.45 times higher than those without filling Al. In addition, the trench filled with Al metal can benefit in the bonding process and behavior as a mirror to reduce the output power loss. These VCSELs show good output characteristics and high-temperature operation.",

keywords = "Trench filling, Vertical-cavity surface-emitting lasers",

author = "Jiang, {Wen Jang} and Chen, {Lung Chien} and Wu, {Meng Chyi} and Hsin-Chieh Yu and Yang, {Hung Pin} and Sung, {Chia Pin} and Chi, {Jim Yong} and Huang, {Chun Yuan} and Wu, {Yi Tsuo}",

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T1 - A new process to improve the performance of 850 nm wavelength GaAs VCSELs

AU - Jiang, Wen Jang

AU - Chen, Lung Chien

AU - Wu, Meng Chyi

AU - Yu, Hsin-Chieh

AU - Yang, Hung Pin

AU - Sung, Chia Pin

AU - Chi, Jim Yong

AU - Huang, Chun Yuan

AU - Wu, Yi Tsuo

PY - 2002/12

Y1 - 2002/12

N2 - In this article, we propose a new process method to improve the light output power of GaAs vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with filling Al metal into the ring trench will exhibit a higher quantum efficiency and have a light output power of 1.45 times higher than those without filling Al. In addition, the trench filled with Al metal can benefit in the bonding process and behavior as a mirror to reduce the output power loss. These VCSELs show good output characteristics and high-temperature operation.

AB - In this article, we propose a new process method to improve the light output power of GaAs vertical-cavity surface-emitting lasers (VCSELs). The VCSELs with filling Al metal into the ring trench will exhibit a higher quantum efficiency and have a light output power of 1.45 times higher than those without filling Al. In addition, the trench filled with Al metal can benefit in the bonding process and behavior as a mirror to reduce the output power loss. These VCSELs show good output characteristics and high-temperature operation.

KW - Trench filling

KW - Vertical-cavity surface-emitting lasers

UR - http://www.scopus.com/inward/record.url?scp=0036891217&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(02)00189-2

DO - 10.1016/S0038-1101(02)00189-2

M3 - Article

AN - SCOPUS:0036891217

SN - 0038-1101

VL - 46

SP - 2287

EP - 2289

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

A new process to improve the performance of 850 nm wavelength GaAs VCSELs

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Keywords

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