Abstract
A new photo-sensitive voltage-controlled differential negative resistance device called the LAMBDA bipolar photo-transistor is presented. The basic structure of the Lambda bipolar photo-transistor consists of the simultaneous integration of a bipolar junction transistor and a merged metal-oxide-semiconductor field effect transistor. The I-V characteristic of this new device will exhibit a voltage-controlled differential negative resistance when the device is exposed to light. The operational principle of this new device will be described and the characteristics of the fabricated device are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 81-82 |
| Number of pages | 2 |
| Journal | IEEE Electron Device Letters |
| Volume | 1 |
| Issue number | 5 |
| DOIs | |
| State | Published - 1 Jan 1980 |