Abstract
A new photo-sensitive voltage-controlled differential negative resistance device called the LAMBDA bipolar photo-transistor is presented. The basic structure of the Lambda bipolar photo-transistor consists of the simultaneous integration of a bipolar junction transistor and a merged metal-oxide-semiconductor field effect transistor. The I-V characteristic of this new device will exhibit a voltage-controlled differential negative resistance when the device is exposed to light. The operational principle of this new device will be described and the characteristics of the fabricated device are discussed.
Original language | English |
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Pages (from-to) | 81-82 |
Number of pages | 2 |
Journal | IEEE Electron Device Letters |
Volume | 1 |
Issue number | 5 |
DOIs | |
State | Published - 1 Jan 1980 |