A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices

Yi-Ming Li; Jinn Liang Liu; Tien-Sheng Chao; S. M. Sze

doi:10.1016/S0010-4655(01)00347-2

A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices

Yi-Ming Li^*, Jinn Liang Liu, Tien-Sheng Chao, S. M. Sze

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

10 Scopus citations

Abstract

Based on adaptive finite volume approximation, a posteriori error estimation, and monotone iteration, a novel system is proposed for parallel simulations of semiconductor devices. The system has two distinct parallel algorithms to perform a complete set of I-V simulations for any specific device model. The first algorithm is a domain decomposition on 1-irregular unstructured meshes whereas the second is a parallelization of multiple I-V points. Implemented on a Linux cluster using message passing interface libraries, both algorithms are shown to have excellent balances on dynamic loading and hence result in efficient speedup. Compared with measurement data, computational results of sub-micron MOSFET devices are given to demonstrate the accuracy and efficiency of the system.

Original language	English
Pages (from-to)	285-289
Number of pages	5
Journal	Computer Physics Communications
Volume	142
Issue number	1-3
DOIs	https://doi.org/10.1016/S0010-4655(01)00347-2
State	Published - 15 Dec 2001
Event	Conference on Computational Physics (CCP'2000) - Gold Coast, Qld., Australia Duration: 3 Dec 2000 → 8 Dec 2000

Keywords

Adaptive FVM
Load balancing
Parallel semiconductor device simulation

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10.1016/S0010-4655(01)00347-2

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title = "A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices",

abstract = "Based on adaptive finite volume approximation, a posteriori error estimation, and monotone iteration, a novel system is proposed for parallel simulations of semiconductor devices. The system has two distinct parallel algorithms to perform a complete set of I-V simulations for any specific device model. The first algorithm is a domain decomposition on 1-irregular unstructured meshes whereas the second is a parallelization of multiple I-V points. Implemented on a Linux cluster using message passing interface libraries, both algorithms are shown to have excellent balances on dynamic loading and hence result in efficient speedup. Compared with measurement data, computational results of sub-micron MOSFET devices are given to demonstrate the accuracy and efficiency of the system.",

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AU - Li, Yi-Ming

AU - Liu, Jinn Liang

AU - Chao, Tien-Sheng

AU - Sze, S. M.

PY - 2001/12/15

Y1 - 2001/12/15

N2 - Based on adaptive finite volume approximation, a posteriori error estimation, and monotone iteration, a novel system is proposed for parallel simulations of semiconductor devices. The system has two distinct parallel algorithms to perform a complete set of I-V simulations for any specific device model. The first algorithm is a domain decomposition on 1-irregular unstructured meshes whereas the second is a parallelization of multiple I-V points. Implemented on a Linux cluster using message passing interface libraries, both algorithms are shown to have excellent balances on dynamic loading and hence result in efficient speedup. Compared with measurement data, computational results of sub-micron MOSFET devices are given to demonstrate the accuracy and efficiency of the system.

AB - Based on adaptive finite volume approximation, a posteriori error estimation, and monotone iteration, a novel system is proposed for parallel simulations of semiconductor devices. The system has two distinct parallel algorithms to perform a complete set of I-V simulations for any specific device model. The first algorithm is a domain decomposition on 1-irregular unstructured meshes whereas the second is a parallelization of multiple I-V points. Implemented on a Linux cluster using message passing interface libraries, both algorithms are shown to have excellent balances on dynamic loading and hence result in efficient speedup. Compared with measurement data, computational results of sub-micron MOSFET devices are given to demonstrate the accuracy and efficiency of the system.

KW - Adaptive FVM

KW - Load balancing

KW - Parallel semiconductor device simulation

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DO - 10.1016/S0010-4655(01)00347-2

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AN - SCOPUS:0035893071

SN - 0010-4655

VL - 142

SP - 285

EP - 289

JO - Computer Physics Communications

JF - Computer Physics Communications

IS - 1-3

T2 - Conference on Computational Physics (CCP'2000)

Y2 - 3 December 2000 through 8 December 2000

ER -

A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices

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Keywords

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