A new output buffer for 3.3-V PCI-X application in a 0.13-μm 1/2.5-V CMOS process

Shih Lun Chen*, Ming-Dou Ker

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    7 Scopus citations

    Abstract

    An output buffer with low-voltage devices to driver high-voltage signals for PCI-X applications is proposed in this paper. Because PCI-X is a 3.3-V interface, the high-voltage gate-oxide stress is a serious problem to design PCI-X I/O circuits in a 0.13-μm 1/2.5-V CMOS process. The simulation results show that the proposed output buffer can be operated at 133 MHz without causing high-voltage gate-oxide stress problem in the 3.3-V PCI-X interface. Besides, a level converter with only 1-V and 2.5-V devices that can converter 0/1-V voltage swing to 1/3.3-V voltage swing is also proposed in this paper. The testchip to verify this new proposed output buffer is now under fabrication. The measured results will be shown in the presentation.

    Original languageEnglish
    Title of host publicationProceedings of 2004 IEEE Asia-Pacific Conference on Advanced System Integrated Circuits
    Pages112-115
    Number of pages4
    DOIs
    StatePublished - 1 Dec 2004
    EventProceedings of 2004 IEEE Asia-Pacific Conference on Advanced System Integrated Circuits - Fukuoka, Japan
    Duration: 4 Aug 20045 Aug 2004

    Publication series

    NameProceedings of 2004 IEEE Asia-Pacific Conference on Advanced System Integrated Circuits

    Conference

    ConferenceProceedings of 2004 IEEE Asia-Pacific Conference on Advanced System Integrated Circuits
    Country/TerritoryJapan
    CityFukuoka
    Period4/08/045/08/04

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