A new CMOS on-chip electrostatic discharge (ESD) protection circuit which consists of dual parasitic SCR structures is proposed and investigated. Experimental results show that with a small layout area of 8800 μm2, the protection circuit can successfully perform negative and positive ESD protection with failure thresholds greater than ±1 and ±10 kV in machine-mode (MM) and human-body-mode (HBM) testing, respectively. The low ESD trigger voltages in both SCR's can be readily achieved through proper circuit design and without involving device or junction breakdown. The input capacitance of the proposed protection circuit is very low and no diffusion resistor between I/O pad and internal circuits is required, so it is suitable for high-speed applications. Moreover, this ESD protection circuit is fully process compatible with CMOS technologies.
|Number of pages||7|
|Journal||IEEE Journal of Solid-State Circuits|
|State||Published - 1 Jan 1992|