A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices

Steve S. Chung*, Y. R. Liu, C. F. Yeh, S. R. Wu, C. S. Lai, T. Y. Chang, J. H. Ho, C. Y. Liu, C. T. Huang, C. T. Tsai, W. T. Shiau, S. W. Sun

*Corresponding author for this work

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Engineering & Materials Science