A new monolithic ka-band filter-based voltage-controlled oscillator using 0.15 μm GaAs pHEMT technology

Chih Lin Chang; Chao Hsiung Tseng; Hong Yeh Chang

doi:10.1109/LMWC.2013.2290224

A new monolithic ka-band filter-based voltage-controlled oscillator using 0.15 μm GaAs pHEMT technology

Chih Lin Chang, Chao Hsiung Tseng, Hong Yeh Chang

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

This letter presents a fully monolithic Ka-band filter-based voltage-controlled oscillator (VCO) with the 0.15 μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) as the active device. A three-pole combline bandpass filter is treated as a frequency stabilization element of the feedback oscillator to achieve a low phase-noise performance. The developed VCO has a frequency tuning range of 37.608-38.06 GHz, and in this frequency rage the calibrated output power is from 6.324 dBm to 10.46 dBm. The phase noise measured at 37.608 GHz is-112.31 dBc/Hz at 1 MHz offset frequency, and its corresponding figure-of-merit (FOM) is-182.7 dBc/Hz.

Original language	English
Article number	6678655
Pages (from-to)	111-113
Number of pages	3
Journal	IEEE Microwave and Wireless Components Letters
Volume	24
Issue number	2
DOIs	https://doi.org/10.1109/LMWC.2013.2290224
State	Published - Feb 2014

Keywords

Combline filter
filter-based microwave oscillator
GaAs
monolithic microwave integrated circuit (MMIC)
pHEMT
voltage-controlled oscillator (VCO)

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10.1109/LMWC.2013.2290224

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title = "A new monolithic ka-band filter-based voltage-controlled oscillator using 0.15 μm GaAs pHEMT technology",

abstract = "This letter presents a fully monolithic Ka-band filter-based voltage-controlled oscillator (VCO) with the 0.15 μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) as the active device. A three-pole combline bandpass filter is treated as a frequency stabilization element of the feedback oscillator to achieve a low phase-noise performance. The developed VCO has a frequency tuning range of 37.608-38.06 GHz, and in this frequency rage the calibrated output power is from 6.324 dBm to 10.46 dBm. The phase noise measured at 37.608 GHz is-112.31 dBc/Hz at 1 MHz offset frequency, and its corresponding figure-of-merit (FOM) is-182.7 dBc/Hz.",

keywords = "Combline filter, filter-based microwave oscillator, GaAs, monolithic microwave integrated circuit (MMIC), pHEMT, voltage-controlled oscillator (VCO)",

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AB - This letter presents a fully monolithic Ka-band filter-based voltage-controlled oscillator (VCO) with the 0.15 μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) as the active device. A three-pole combline bandpass filter is treated as a frequency stabilization element of the feedback oscillator to achieve a low phase-noise performance. The developed VCO has a frequency tuning range of 37.608-38.06 GHz, and in this frequency rage the calibrated output power is from 6.324 dBm to 10.46 dBm. The phase noise measured at 37.608 GHz is-112.31 dBc/Hz at 1 MHz offset frequency, and its corresponding figure-of-merit (FOM) is-182.7 dBc/Hz.

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KW - GaAs

KW - monolithic microwave integrated circuit (MMIC)

KW - pHEMT

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A new monolithic ka-band filter-based voltage-controlled oscillator using 0.15 μm GaAs pHEMT technology

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Keywords

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