A new high voltage IC with robust isolation design

Vivek Ningaraju; Horng-Chih Lin; Po An Chen; Jiin Shiarng Wen

doi:10.1109/VLSI-TSA.2018.8403845

A new high voltage IC with robust isolation design

Vivek Ningaraju^*
, Horng-Chih Lin
, Po An Chen
, Jiin Shiarng Wen

^*Corresponding author for this work

Institute of Electronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A new and robust isolation design for control devices integrated in the high side island region of 250V high-voltage integrated circuits (HVIC) is proposed and verified by numerical calculations, simulations and experiments. The new isolation structure can be realized using micro N-well in the P-type isolation region to achieve a higher breakdown voltage (BV). The measurement and TCAD simulation results prove this new isolation structure's BV is over 350V with negligible leakage current. In the proposed scheme BV is improved by 15% more than the conventional structure without adding additional process steps and photo layers.

Original language	English
Title of host publication	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1-2
Number of pages	2
ISBN (Electronic)	9781538648254
DOIs	https://doi.org/10.1109/VLSI-TSA.2018.8403845
State	Published - 3 Jul 2018
Event	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 - Hsinchu, Taiwan Duration: 16 Apr 2018 → 19 Apr 2018

Publication series

Name	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Conference

Conference	2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Country/Territory	Taiwan
City	Hsinchu
Period	16/04/18 → 19/04/18

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10.1109/VLSI-TSA.2018.8403845

Cite this

Ningaraju, V., Lin, H.-C., Chen, P. A., & Wen, J. S. (2018). A new high voltage IC with robust isolation design. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 (pp. 1-2). (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2018.8403845

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title = "A new high voltage IC with robust isolation design",

abstract = "A new and robust isolation design for control devices integrated in the high side island region of 250V high-voltage integrated circuits (HVIC) is proposed and verified by numerical calculations, simulations and experiments. The new isolation structure can be realized using micro N-well in the P-type isolation region to achieve a higher breakdown voltage (BV). The measurement and TCAD simulation results prove this new isolation structure's BV is over 350V with negligible leakage current. In the proposed scheme BV is improved by 15\% more than the conventional structure without adding additional process steps and photo layers.",

author = "Vivek Ningaraju and Horng-Chih Lin and Chen, \{Po An\} and Wen, \{Jiin Shiarng\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018 ; Conference date: 16-04-2018 Through 19-04-2018",

year = "2018",

month = jul,

day = "3",

doi = "10.1109/VLSI-TSA.2018.8403845",

language = "English",

series = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018",

address = "美國",

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Ningaraju, V, Lin, H-C, Chen, PA & Wen, JS 2018, A new high voltage IC with robust isolation design. in 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Institute of Electrical and Electronics Engineers Inc., pp. 1-2, 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018, Hsinchu, Taiwan, 16/04/18. https://doi.org/10.1109/VLSI-TSA.2018.8403845

A new high voltage IC with robust isolation design. / Ningaraju, Vivek; Lin, Horng-Chih; Chen, Po An et al.
2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 1-2 (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Lin, Horng-Chih

AU - Chen, Po An

AU - Wen, Jiin Shiarng

PY - 2018/7/3

Y1 - 2018/7/3

N2 - A new and robust isolation design for control devices integrated in the high side island region of 250V high-voltage integrated circuits (HVIC) is proposed and verified by numerical calculations, simulations and experiments. The new isolation structure can be realized using micro N-well in the P-type isolation region to achieve a higher breakdown voltage (BV). The measurement and TCAD simulation results prove this new isolation structure's BV is over 350V with negligible leakage current. In the proposed scheme BV is improved by 15% more than the conventional structure without adding additional process steps and photo layers.

AB - A new and robust isolation design for control devices integrated in the high side island region of 250V high-voltage integrated circuits (HVIC) is proposed and verified by numerical calculations, simulations and experiments. The new isolation structure can be realized using micro N-well in the P-type isolation region to achieve a higher breakdown voltage (BV). The measurement and TCAD simulation results prove this new isolation structure's BV is over 350V with negligible leakage current. In the proposed scheme BV is improved by 15% more than the conventional structure without adding additional process steps and photo layers.

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DO - 10.1109/VLSI-TSA.2018.8403845

M3 - Conference contribution

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T3 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

SP - 1

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BT - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018

Y2 - 16 April 2018 through 19 April 2018

ER -

Ningaraju V, Lin HC, Chen PA, Wen JS. A new high voltage IC with robust isolation design. In 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 1-2. (2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018). doi: 10.1109/VLSI-TSA.2018.8403845

A new high voltage IC with robust isolation design

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