TY - GEN
T1 - A new and simple DC method for thermal-resistance extraction of scaled FinFET devices
AU - Huang, Wei Cheng
AU - Su, Pin
N1 - Publisher Copyright:
© 2018 IEEE.
PY - 2018/7/3
Y1 - 2018/7/3
N2 - This work proposes a new and simple hot-chuck measurement method for the extraction of the thermal resistance of FinFETs. The intrinsic transconductance that eliminates the parasitic source/drain resistance effect can serve as a temperature sensor to characterize the device temperature rise due to self-heating. Our method requires only DC measurements without the need of special test structures.
AB - This work proposes a new and simple hot-chuck measurement method for the extraction of the thermal resistance of FinFETs. The intrinsic transconductance that eliminates the parasitic source/drain resistance effect can serve as a temperature sensor to characterize the device temperature rise due to self-heating. Our method requires only DC measurements without the need of special test structures.
UR - http://www.scopus.com/inward/record.url?scp=85050495693&partnerID=8YFLogxK
U2 - 10.1109/VLSI-TSA.2018.8403832
DO - 10.1109/VLSI-TSA.2018.8403832
M3 - Conference contribution
AN - SCOPUS:85050495693
T3 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
SP - 1
EP - 2
BT - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2018
Y2 - 16 April 2018 through 19 April 2018
ER -