A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs

Wen Li Sung, Yiming Li*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A nanosized-metal-grain pattern-dependent model was proposed for work-function-fluctuation (WKF)-induced variability on the gate-all-around (GAA) silicon nanofin and nanosheet MOSFET (NF-FET and NS-FET). This model was developed by the perturbation of location metal grains with error correction (EC) and was validated by the 3D device simulation (3D-DS) with 5000 samples in low errors (error rate (ER) < 1%). The model can estimate the uncertainty of WKF-induced variability in huge patterns without executing 3D-DS to save the computational resources.

Original languageEnglish
Title of host publication2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665409230
DOIs
StatePublished - 2022
Event2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan
Duration: 18 Apr 202221 Apr 2022

Publication series

Name2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/TerritoryTaiwan
CityHsinchu
Period18/04/2221/04/22

Keywords

  • nanofin
  • nanosheet
  • work function fluctuation

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