A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs

Wen Li Sung; Yiming Li

doi:10.1109/VLSI-TSA54299.2022.9770984

A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs

Wen Li Sung, Yiming Li^*

^*Corresponding author for this work

Institute of Communications Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

A nanosized-metal-grain pattern-dependent model was proposed for work-function-fluctuation (WKF)-induced variability on the gate-all-around (GAA) silicon nanofin and nanosheet MOSFET (NF-FET and NS-FET). This model was developed by the perturbation of location metal grains with error correction (EC) and was validated by the 3D device simulation (3D-DS) with 5000 samples in low errors (error rate (ER) < 1%). The model can estimate the uncertainty of WKF-induced variability in huge patterns without executing 3D-DS to save the computational resources.

Original language	English
Title of host publication	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665409230
DOIs	https://doi.org/10.1109/VLSI-TSA54299.2022.9770984
State	Published - 2022
Event	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 - Hsinchu, Taiwan Duration: 18 Apr 2022 → 21 Apr 2022

Publication series

Name	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

Conference

Conference	2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022
Country/Territory	Taiwan
City	Hsinchu
Period	18/04/22 → 21/04/22

Keywords

nanofin
nanosheet
work function fluctuation

Access to Document

10.1109/VLSI-TSA54299.2022.9770984

Cite this

Sung, W. L., & Li, Y. (2022). A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA54299.2022.9770984

Sung, Wen Li ; Li, Yiming. / A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

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title = "A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs",

abstract = "A nanosized-metal-grain pattern-dependent model was proposed for work-function-fluctuation (WKF)-induced variability on the gate-all-around (GAA) silicon nanofin and nanosheet MOSFET (NF-FET and NS-FET). This model was developed by the perturbation of location metal grains with error correction (EC) and was validated by the 3D device simulation (3D-DS) with 5000 samples in low errors (error rate (ER) < 1%). The model can estimate the uncertainty of WKF-induced variability in huge patterns without executing 3D-DS to save the computational resources.",

keywords = "nanofin, nanosheet, work function fluctuation",

author = "Sung, {Wen Li} and Yiming Li",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022 ; Conference date: 18-04-2022 Through 21-04-2022",

year = "2022",

doi = "10.1109/VLSI-TSA54299.2022.9770984",

language = "English",

series = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022",

address = "美國",

}

Sung, WL & Li, Y 2022, A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs. in 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Institute of Electrical and Electronics Engineers Inc., 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022, Hsinchu, Taiwan, 18/04/22. https://doi.org/10.1109/VLSI-TSA54299.2022.9770984

A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs. / Sung, Wen Li; Li, Yiming.
2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Sung, Wen Li

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PY - 2022

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N2 - A nanosized-metal-grain pattern-dependent model was proposed for work-function-fluctuation (WKF)-induced variability on the gate-all-around (GAA) silicon nanofin and nanosheet MOSFET (NF-FET and NS-FET). This model was developed by the perturbation of location metal grains with error correction (EC) and was validated by the 3D device simulation (3D-DS) with 5000 samples in low errors (error rate (ER) < 1%). The model can estimate the uncertainty of WKF-induced variability in huge patterns without executing 3D-DS to save the computational resources.

AB - A nanosized-metal-grain pattern-dependent model was proposed for work-function-fluctuation (WKF)-induced variability on the gate-all-around (GAA) silicon nanofin and nanosheet MOSFET (NF-FET and NS-FET). This model was developed by the perturbation of location metal grains with error correction (EC) and was validated by the 3D device simulation (3D-DS) with 5000 samples in low errors (error rate (ER) < 1%). The model can estimate the uncertainty of WKF-induced variability in huge patterns without executing 3D-DS to save the computational resources.

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KW - nanosheet

KW - work function fluctuation

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M3 - Conference contribution

AN - SCOPUS:85130497818

T3 - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

BT - 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022

PB - Institute of Electrical and Electronics Engineers Inc.

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Sung WL, Li Y. A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs. In 2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2022). doi: 10.1109/VLSI-TSA54299.2022.9770984

A Nanosized-Metal-Grain Pattern-Dependent Model for Work-Function Fluctuation of Gate-All-Around Silicon Nanofin and Nanosheet MOSFETs

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