@inproceedings{49a2a14b15444d228403f4c738954457,
title = "A multi-contact six-Terminal cross-bridge Kelvin resistor (CBKR) structure for evaluation of interface uniformity of the Ti-Al alloy/p-Type 4H-SiC contact",
abstract = "A multi-contact six-Terminal cross-bridge Kelvin resistor (CBKR) structure is proposed to characterize the Ti-Al alloy/p-Type 4H-SiC contact. It is confirmed that the test structure can judge the uniformity of the contact interface without destructive analysis such as cross-sectional transmission electron microscopy. Comparing with the results of singlecontact CBKR structure, it is observed that the contact interface is non-uniform and the formation of low resistivity interface depends on the contact area. This area-dependence issue should be solved in order to improve the SiC power devices and CMOS ICs.",
keywords = "cross-bridge Kelvin resistor, ohmic contact, silicon carbide, specific contact resistance",
author = "Chen, {Yen Ling} and Lai, {Shih Hao} and Lin, {Jian Hao} and Tsui, {Bing Yue}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 35th International Conference on Microelectronic Test Structure, ICMTS 2023 ; Conference date: 27-03-2023 Through 30-03-2023",
year = "2023",
doi = "10.1109/ICMTS55420.2023.10094097",
language = "English",
series = "IEEE International Conference on Microelectronic Test Structures",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 35th International Conference on Microelectronic Test Structure, ICMTS 2023",
address = "美國",
}