@inproceedings{6ebf74c4b9d24c8bbe13e820701237ef,
title = "A Monolithic Low-ILEAK Cross-Coupled GaN Driver with ΔΦ-Reduced EMI-Rejecter for 21.51dBμV-EMI-Reduction and 1/10x filter-capacitor",
abstract = "The proposed ΔΦ-reduced EMI rejecter reduces the EMI amplitude of 21.51dBμV, passes CISPR25 specification, and reduces the filter capacitor by 1/10 times, thereby reducing the PCB size. The proposed monolithic low ILEAK cross-coupled GaN driver provides a dv/dt of 111.2V/ns for V sw and maintains V GH at VBT for more than 1000μs at 150°C in long-term chamber tests. The peak efficiency is 94.5%. In a 400V-to-48V conversion, the output power is 240W (=48V∗5A) and meets the USB PD 3.1 standard.",
author = "Tsai, {Hsing Yen} and Zeng, {Shi Jun} and Liang, {Yu Teng} and Chen, {Ke Horng} and Zheng, {Kuo Lin} and Li, {Chih Chen}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024 ; Conference date: 16-06-2024 Through 20-06-2024",
year = "2024",
doi = "10.1109/VLSITechnologyandCir46783.2024.10631374",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024",
address = "美國",
}