@inproceedings{d1bd469e5510412e98fa1f4366a5df1a,
title = "A Monolithic GaN-based Gate Driver for LLC-SRC with Three-Phase Startup Clamping Achieving 23.2μA IQ and 98.6\% Peak Efficiency",
abstract = "To meet Energy Star and 80 Plus Titanium standards, the proposed hybrid gate driver reduces the quiescent current (IQ) to 23.2μA by reducing GaN leakage current. The proposed auto-precharge (APC) technique can reduce the leakage current (ILKG) in standby mode from a few milliamperes to 60.4μA, resulting in an efficiency greater than 92\% at the entire output load. In addition, soft-start clamping (SSC) technique reduces the peak voltage from 2.51kVto 620V, safely reducing power consumption during soft-start. As a result, the LLC converter achieves a peak efficiency of 98.6\%.",
author = "Chen, \{Chi Yu\} and Wang, \{Tz Wun\} and Chiu, \{Po Jui\} and Hung, \{Sheng Hsi\} and Go, \{Chang Lin\} and Wu, \{Xiao Quan\} and Huang, \{Yu Ting\} and Chen, \{Ke Horng\} and Zeng, \{Kuo Lin\} and Lin, \{Ying Hsi\} and Lin, \{Shian Ru\} and Tsai, \{Tsung Yen\}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024 ; Conference date: 16-06-2024 Through 20-06-2024",
year = "2024",
doi = "10.1109/VLSITechnologyandCir46783.2024.10631421",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024",
address = "美國",
}