@inproceedings{d1bd469e5510412e98fa1f4366a5df1a,
title = "A Monolithic GaN-based Gate Driver for LLC-SRC with Three-Phase Startup Clamping Achieving 23.2μA IQ and 98.6% Peak Efficiency",
abstract = "To meet Energy Star and 80 Plus Titanium standards, the proposed hybrid gate driver reduces the quiescent current (IQ) to 23.2μA by reducing GaN leakage current. The proposed auto-precharge (APC) technique can reduce the leakage current (ILKG) in standby mode from a few milliamperes to 60.4μA, resulting in an efficiency greater than 92% at the entire output load. In addition, soft-start clamping (SSC) technique reduces the peak voltage from 2.51kVto 620V, safely reducing power consumption during soft-start. As a result, the LLC converter achieves a peak efficiency of 98.6%.",
author = "Chen, {Chi Yu} and Wang, {Tz Wun} and Chiu, {Po Jui} and Hung, {Sheng Hsi} and Go, {Chang Lin} and Wu, {Xiao Quan} and Huang, {Yu Ting} and Chen, {Ke Horng} and Zeng, {Kuo Lin} and Lin, {Ying Hsi} and Lin, {Shian Ru} and Tsai, {Tsung Yen}",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024 ; Conference date: 16-06-2024 Through 20-06-2024",
year = "2024",
doi = "10.1109/VLSITechnologyandCir46783.2024.10631421",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2024 IEEE Symposium on VLSI Technology and Circuits, VLSI Technology and Circuits 2024",
address = "美國",
}