A monolithic CMOS MEMS accelerometer with low noise gain tunable interface in 0.18μm CMOS MEMS technology

Yi Da Lin; Jian Yuan Lin; Chun Kai Wang; Long Sheng Fan; Kuei-Ann Wen

doi:10.1109/ICSENS.2012.6411546

A monolithic CMOS MEMS accelerometer with low noise gain tunable interface in 0.18μm CMOS MEMS technology

Yi Da Lin, Jian Yuan Lin, Chun Kai Wang^*, Long Sheng Fan, Kuei-Ann Wen

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

A monolithic capacitance accelerometer is fabricated in 0.18μm ASIC-compatible CMOS MEMS technology and, with the assistant of universal sensing system being developed in the proposed work. The new approach combines the Dual-Chopper amplifier and Correlated Double Sampling to alleviate 1/f noise and DC offset. The total noise equivalent acceleration is 13.49ug/√Hz under 500 Hz. The tunable sensitivity can be adjusted from 324.8 mV/fF to 17807.11mV/fF (differential mode) by the fully-differential variable gain amplifier (VGA).

Original language	English
Title of host publication	IEEE SENSORS 2012 - Proceedings
DOIs	https://doi.org/10.1109/ICSENS.2012.6411546
State	Published - 1 Dec 2012
Event	11th IEEE SENSORS 2012 Conference - Taipei, Taiwan Duration: 28 Oct 2012 → 31 Oct 2012

Publication series

Name	Proceedings of IEEE Sensors

Conference

Conference	11th IEEE SENSORS 2012 Conference
Country/Territory	Taiwan
City	Taipei
Period	28/10/12 → 31/10/12

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10.1109/ICSENS.2012.6411546

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title = "A monolithic CMOS MEMS accelerometer with low noise gain tunable interface in 0.18μm CMOS MEMS technology",

abstract = "A monolithic capacitance accelerometer is fabricated in 0.18μm ASIC-compatible CMOS MEMS technology and, with the assistant of universal sensing system being developed in the proposed work. The new approach combines the Dual-Chopper amplifier and Correlated Double Sampling to alleviate 1/f noise and DC offset. The total noise equivalent acceleration is 13.49ug/√Hz under 500 Hz. The tunable sensitivity can be adjusted from 324.8 mV/fF to 17807.11mV/fF (differential mode) by the fully-differential variable gain amplifier (VGA).",

author = "Lin, {Yi Da} and Lin, {Jian Yuan} and Wang, {Chun Kai} and Fan, {Long Sheng} and Kuei-Ann Wen",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/ICSENS.2012.6411546",

language = "English",

isbn = "9781457717659",

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AU - Lin, Yi Da

AU - Lin, Jian Yuan

AU - Wang, Chun Kai

AU - Fan, Long Sheng

AU - Wen, Kuei-Ann

PY - 2012/12/1

Y1 - 2012/12/1

N2 - A monolithic capacitance accelerometer is fabricated in 0.18μm ASIC-compatible CMOS MEMS technology and, with the assistant of universal sensing system being developed in the proposed work. The new approach combines the Dual-Chopper amplifier and Correlated Double Sampling to alleviate 1/f noise and DC offset. The total noise equivalent acceleration is 13.49ug/√Hz under 500 Hz. The tunable sensitivity can be adjusted from 324.8 mV/fF to 17807.11mV/fF (differential mode) by the fully-differential variable gain amplifier (VGA).

AB - A monolithic capacitance accelerometer is fabricated in 0.18μm ASIC-compatible CMOS MEMS technology and, with the assistant of universal sensing system being developed in the proposed work. The new approach combines the Dual-Chopper amplifier and Correlated Double Sampling to alleviate 1/f noise and DC offset. The total noise equivalent acceleration is 13.49ug/√Hz under 500 Hz. The tunable sensitivity can be adjusted from 324.8 mV/fF to 17807.11mV/fF (differential mode) by the fully-differential variable gain amplifier (VGA).

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DO - 10.1109/ICSENS.2012.6411546

M3 - Conference contribution

AN - SCOPUS:84873977510

SN - 9781457717659

T3 - Proceedings of IEEE Sensors

BT - IEEE SENSORS 2012 - Proceedings

T2 - 11th IEEE SENSORS 2012 Conference

Y2 - 28 October 2012 through 31 October 2012

ER -

A monolithic CMOS MEMS accelerometer with low noise gain tunable interface in 0.18μm CMOS MEMS technology

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