A model of power transistor turn-off dynamics

Chen-Ming Hu; Michael J. Model

doi:10.1109/PESC.1980.7089437

A model of power transistor turn-off dynamics

Chen-Ming Hu, Michael J. Model

International College of Semiconductor Technology

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

A theoretical model of npvn power transistor turn-off transients oriented toward circuit analysis is presented. It predicts the collector voltage waveforms under constant collector and reverse base currents in closed-form expressions. In particular, a storage period, a voltage-rise period and their dependence on currents and device parameters are revealed. It also provides a conceptual one-dimensional model for the physical processes of switching turn-off.

Original language	English
Article number	7089437
Pages (from-to)	91-96
Number of pages	6
Journal	PESC Record - IEEE Annual Power Electronics Specialists Conference
Volume	1980-January
DOIs	https://doi.org/10.1109/PESC.1980.7089437
State	Published - 1 Jan 1980
Event	11th Annual IEEE Power Electronics Specialists Conference, PESC 1980 - Atlanta, United States Duration: 16 Jun 1980 → 20 Jun 1980

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10.1109/PESC.1980.7089437

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abstract = "A theoretical model of npvn power transistor turn-off transients oriented toward circuit analysis is presented. It predicts the collector voltage waveforms under constant collector and reverse base currents in closed-form expressions. In particular, a storage period, a voltage-rise period and their dependence on currents and device parameters are revealed. It also provides a conceptual one-dimensional model for the physical processes of switching turn-off.",

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AU - Model, Michael J.

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AB - A theoretical model of npvn power transistor turn-off transients oriented toward circuit analysis is presented. It predicts the collector voltage waveforms under constant collector and reverse base currents in closed-form expressions. In particular, a storage period, a voltage-rise period and their dependence on currents and device parameters are revealed. It also provides a conceptual one-dimensional model for the physical processes of switching turn-off.

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DO - 10.1109/PESC.1980.7089437

M3 - Conference article

AN - SCOPUS:0019149101

SN - 0275-9306

VL - 1980-January

SP - 91

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JO - PESC Record - IEEE Annual Power Electronics Specialists Conference

JF - PESC Record - IEEE Annual Power Electronics Specialists Conference

M1 - 7089437

Y2 - 16 June 1980 through 20 June 1980

ER -

A model of power transistor turn-off dynamics

Abstract

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