A millimeter-wave wideband SPDT switch with traveling-wave concept using 0.13-μm CMOS process

Mei Chao Yeh*, Zuo-Min Tsai , Kun You Lin, Huei Wang, Chia Yi Su, Chih Ping Chao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

19 Scopus citations

Abstract

A wideband SPDT switch in standard bulk 0.13-μm CMOS process is demonstrated in this paper. In order to extend the operation frequency, the traveling-wave circuit topology is utilized. Due to the different requirements in the transmit and receive paths, the switch is designed to be asymmetric. In the receive path, the switch achieves a measured insertion loss less than 2.7 dB, a measured isolation better than 26 dB from 27 to 50 GHz. On the other hand, for the transmit path, the switch also achieves a measured insertion loss less than 4.4 dB, and an isolation better than 14 dB from 30 to 63 GHz. At 40 GHz, a measured input P 1dB of 13.8 dBm is attained. The chip size is only 0.8 × 0.5 mm 2 . The measured data agree with the simulation results well. To our knowledge, this work is the first CMOS switch in millimeter-wave frequency range.

Original languageEnglish
Title of host publication2005 IEEE MTT-S International Microwave Symposium Digest
Pages53-56
Number of pages4
DOIs
StatePublished - 1 Dec 2005
Event2005 IEEE MTT-S International Microwave Symposium - Long Beach, CA, United States
Duration: 12 Jun 200517 Jun 2005

Publication series

NameIEEE MTT-S International Microwave Symposium Digest
Volume2005
ISSN (Print)0149-645X

Conference

Conference2005 IEEE MTT-S International Microwave Symposium
Country/TerritoryUnited States
CityLong Beach, CA
Period12/06/0517/06/05

Keywords

  • CMOS
  • SPDT switch
  • Traveling wave

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