| Original language | Chinese (Traditional) |
|---|---|
| Patent number | US 8,071,458 B1 |
| State | Published - 6 Dec 2011 |
A method for forming an interfacial passivation layer on the Ge semiconductor
Po-Tsun Liu (Inventor)
Research output: Patent
Po-Tsun Liu (Inventor)
Research output: Patent
| Original language | Chinese (Traditional) |
|---|---|
| Patent number | US 8,071,458 B1 |
| State | Published - 6 Dec 2011 |