A method for fabricating a superior oxide/nitride/oxide gate stack

T. C. Chang*, S. T. Yan, Po-Tsun Liu, M. C. Wang, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


A superior oxide/nitride/oxide (ONO) gate stack was demonstrated. High density plasma chemical vapor deposition was used to deposit the silicon nitride layer instead of the conventional low-pressure chemical vapor deposition for silicon/oxide/nitride/oxide/silicon technology. The densified nitride layer was performed by high-temperature dry oxidation to form a thermally grown blocking oxide layer on the silicon nitride rather than a deposited oxide layer. The ONO gate stack shows large memory window, high breakdown voltage, and reliable endurance characteristics, which is a potential candidate for future nonvolatile memory technology.

Original languageEnglish
Pages (from-to)G138-G140
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number7
StatePublished - 2004


Dive into the research topics of 'A method for fabricating a superior oxide/nitride/oxide gate stack'. Together they form a unique fingerprint.

Cite this