Abstract
A new automatic parameter extraction method for modeling of silicon spiral inductors is presented. The concepts on self-resonance frequency (f sr ) and quality factor of a spiral inductor are utilized to develop the concise extraction procedures. In the mean time, the presented extraction procedures are programmed as a macro to execute all the extractions automatically and shorten the extraction time effectively. Without any additional optimization or curve fitting, almost all the patterns of S-parameters between the measured and the simulation of extracted data implemented with the extraction macro are less than 5%. The programmed extraction macro makes it fast and accurate to extract and characterize the behaviors of silicon-based spiral inductors with different structures and substrate resistivities. It provides a concrete foundation for commercial silicon radiofrequency (RF) circuit design to realizing on-chip silicon RF integrated circuits. Furthermore, the directly extracted equivalent model parameters, without any optimization, also provide a rule to fairly, effectively and physically judge the performance of a spiral inductor.
Original language | English |
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Pages (from-to) | 759-767 |
Number of pages | 9 |
Journal | Solid-State Electronics |
Volume | 46 |
Issue number | 5 |
DOIs | |
State | Published - 1 May 2002 |
Keywords
- Programmed extraction macro
- Radiofrequency (RF)
- Spiral inductor