A <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>10 to <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A Leakage Current <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> Tracking Technique for 20-MHz Depletion-Mode GaN Metal&#x2013;Insulator&#x2013;Semiconductor High-Electron-Mobility Transistors

Yong Hwa Wen, Tz Wun Wang, Tzu Hsien Yang, Sheng Hsi Hung, Kuo Lin Zheng, Ke Horng Chen, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

Research output: Contribution to journalArticlepeer-review

Abstract

This article proposes an inverting buck-boost drive (IBBD) gallium nitride (GaN) driver, which directly drives depletion-mode GaN (D-GaN) metal&#x2013;insulator&#x2013;semiconductor high-electron-mobility transistor (MIS-HEMT). In the proposed driver fabricated with a 0.5-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m CMOS process, the <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> tracking technique can reduce switching loss and minimize the leakage current of D-GaN MIS-HEMT to sub-1 <inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A. To suppress the electromagnetic interference (EMI) caused by the ringing voltage at drain of the GaN switch when reducing from 22 to 1.9 V, a Miller plateau (MP) detector and an EMI suppression frequency controller (ESFC) are also applied. With the slew rate (SR) control and fast-level shifter, the maximum switching frequency can reach up to 20 MHz, and <inline-formula> <tex-math notation="LaTeX">$dV_{\mathrm{DS}}$</tex-math> </inline-formula>/dt can be regulated at 120 V/ns. In addition, the power saving mode of IBB converter and accurate ultralow power (ULP) under voltage lockout (UVLO) are proposed to reduce the quiescent current to 580 nA during standby mode, thereby enhances light load efficiency. The peak efficiency is as high as 95.8% and chip areas are 5.1 and 6.6 mm<inline-formula> <tex-math notation="LaTeX">$^{2}$</tex-math> </inline-formula>.

Original languageEnglish
Pages (from-to)1-11
Number of pages11
JournalIEEE Journal of Solid-State Circuits
DOIs
StateAccepted/In press - 2022

Keywords

  • <inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> tracking
  • Electromagnetic interference
  • Gallium nitride
  • Gallium nitride (GaN)
  • Leakage currents
  • Logic gates
  • Miller plateau (MP) voltage
  • Switches
  • Switching frequency
  • Switching loss
  • ultralow quiescent current

Fingerprint

Dive into the research topics of 'A <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>10 to <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A Leakage Current <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> Tracking Technique for 20-MHz Depletion-Mode GaN Metal&#x2013;Insulator&#x2013;Semiconductor High-Electron-Mobility Transistors'. Together they form a unique fingerprint.

Cite this