A <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>10 to <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A Leakage Current <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> Tracking Technique for 20-MHz Depletion-Mode GaN Metal&#x2013;Insulator&#x2013;Semiconductor High-Electron-Mobility Transistors

Yong Hwa Wen; Tz Wun Wang; Tzu Hsien Yang; Sheng Hsi Hung; Kuo Lin Zheng; Ke Horng Chen; Ying Hsi Lin; Shian Ru Lin; Tsung Yen Tsai

doi:10.1109/JSSC.2022.3181792

A <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>10 to <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A Leakage Current <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> Tracking Technique for 20-MHz Depletion-Mode GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

Yong Hwa Wen, Tz Wun Wang, Tzu Hsien Yang, Sheng Hsi Hung, Kuo Lin Zheng, Ke Horng Chen, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This article proposes an inverting buck-boost drive (IBBD) gallium nitride (GaN) driver, which directly drives depletion-mode GaN (D-GaN) metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT). In the proposed driver fabricated with a 0.5-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>m CMOS process, the <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> tracking technique can reduce switching loss and minimize the leakage current of D-GaN MIS-HEMT to sub-1 <inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A. To suppress the electromagnetic interference (EMI) caused by the ringing voltage at drain of the GaN switch when reducing from 22 to 1.9 V, a Miller plateau (MP) detector and an EMI suppression frequency controller (ESFC) are also applied. With the slew rate (SR) control and fast-level shifter, the maximum switching frequency can reach up to 20 MHz, and <inline-formula> <tex-math notation="LaTeX">$dV_{\mathrm{DS}}$</tex-math> </inline-formula>/dt can be regulated at 120 V/ns. In addition, the power saving mode of IBB converter and accurate ultralow power (ULP) under voltage lockout (UVLO) are proposed to reduce the quiescent current to 580 nA during standby mode, thereby enhances light load efficiency. The peak efficiency is as high as 95.8% and chip areas are 5.1 and 6.6 mm<inline-formula> <tex-math notation="LaTeX">$^{2}$</tex-math> </inline-formula>.

Original language	English
Pages (from-to)	1-11
Number of pages	11
Journal	IEEE Journal of Solid-State Circuits
DOIs	https://doi.org/10.1109/JSSC.2022.3181792
State	Accepted/In press - 2022

Keywords

<inline-formula xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance"> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> tracking
Electromagnetic interference
Gallium nitride
Gallium nitride (GaN)
Leakage currents
Logic gates
Miller plateau (MP) voltage
Switches
Switching frequency
Switching loss
ultralow quiescent current

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10.1109/JSSC.2022.3181792

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Wen, Y. H., Wang, T. W., Yang, T. H., Hung, S. H., Zheng, K. L., Chen, K. H., Lin, Y. H., Lin, S. R., & Tsai, T. Y. (Accepted/In press). A <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>10 to <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A Leakage Current <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> Tracking Technique for 20-MHz Depletion-Mode GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors. IEEE Journal of Solid-State Circuits, 1-11. https://doi.org/10.1109/JSSC.2022.3181792

Wen, Yong Hwa ; Wang, Tz Wun ; Yang, Tzu Hsien et al. / A <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>10 to <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A Leakage Current <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> Tracking Technique for 20-MHz Depletion-Mode GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors. In: IEEE Journal of Solid-State Circuits. 2022 ; pp. 1-11.

@article{be70f7e9d74b4bb09cd4a27ab27695f3,

title = "A $-$ 10 to $-$ 20-V Inverting Buck-Boost Drive GaN Driver With Sub-1- $\mu$ A Leakage Current $V_{\mathrm{th}}$ Tracking Technique for 20-MHz Depletion-Mode GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors",

abstract = "This article proposes an inverting buck-boost drive (IBBD) gallium nitride (GaN) driver, which directly drives depletion-mode GaN (D-GaN) metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT). In the proposed driver fabricated with a 0.5- $\mu$ m CMOS process, the $V_{\mathrm{th}}$ tracking technique can reduce switching loss and minimize the leakage current of D-GaN MIS-HEMT to sub-1 $\mu$ A. To suppress the electromagnetic interference (EMI) caused by the ringing voltage at drain of the GaN switch when reducing from 22 to 1.9 V, a Miller plateau (MP) detector and an EMI suppression frequency controller (ESFC) are also applied. With the slew rate (SR) control and fast-level shifter, the maximum switching frequency can reach up to 20 MHz, and $dV_{\mathrm{DS}}$ /dt can be regulated at 120 V/ns. In addition, the power saving mode of IBB converter and accurate ultralow power (ULP) under voltage lockout (UVLO) are proposed to reduce the quiescent current to 580 nA during standby mode, thereby enhances light load efficiency. The peak efficiency is as high as 95.8% and chip areas are 5.1 and 6.6 mm $^{2}$ .",

keywords = "<inline-formula xmlns:ali={"}http://www.niso.org/schemas/ali/1.0/{"} xmlns:mml={"}http://www.w3.org/1998/Math/MathML{"} xmlns:xlink={"}http://www.w3.org/1999/xlink{"} xmlns:xsi={"}http://www.w3.org/2001/XMLSchema-instance{"}> <tex-math notation={"}LaTeX{"}>$V_{\mathrm{th}}$</tex-math> </inline-formula> tracking, Electromagnetic interference, Gallium nitride, Gallium nitride (GaN), Leakage currents, Logic gates, Miller plateau (MP) voltage, Switches, Switching frequency, Switching loss, ultralow quiescent current",

author = "Wen, {Yong Hwa} and Wang, {Tz Wun} and Yang, {Tzu Hsien} and Hung, {Sheng Hsi} and Zheng, {Kuo Lin} and Chen, {Ke Horng} and Lin, {Ying Hsi} and Lin, {Shian Ru} and Tsai, {Tsung Yen}",

note = "Publisher Copyright: IEEE",

year = "2022",

doi = "10.1109/JSSC.2022.3181792",

language = "English",

pages = "1--11",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Wen, YH, Wang, TW, Yang, TH, Hung, SH, Zheng, KL, Chen, KH, Lin, YH, Lin, SR & Tsai, TY 2022, 'A <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>10 to <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A Leakage Current <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> Tracking Technique for 20-MHz Depletion-Mode GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors', IEEE Journal of Solid-State Circuits, pp. 1-11. https://doi.org/10.1109/JSSC.2022.3181792

A <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>10 to <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A Leakage Current <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> Tracking Technique for 20-MHz Depletion-Mode GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors. / Wen, Yong Hwa; Wang, Tz Wun; Yang, Tzu Hsien et al.
In: IEEE Journal of Solid-State Circuits, 2022, p. 1-11.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A $-$ 10 to $-$ 20-V Inverting Buck-Boost Drive GaN Driver With Sub-1- $\mu$ A Leakage Current $V_{\mathrm{th}}$ Tracking Technique for 20-MHz Depletion-Mode GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors

AU - Wen, Yong Hwa

AU - Wang, Tz Wun

AU - Yang, Tzu Hsien

AU - Hung, Sheng Hsi

AU - Zheng, Kuo Lin

AU - Chen, Ke Horng

AU - Lin, Ying Hsi

AU - Lin, Shian Ru

AU - Tsai, Tsung Yen

N1 - Publisher Copyright: IEEE

PY - 2022

Y1 - 2022

N2 - This article proposes an inverting buck-boost drive (IBBD) gallium nitride (GaN) driver, which directly drives depletion-mode GaN (D-GaN) metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT). In the proposed driver fabricated with a 0.5- $\mu$ m CMOS process, the $V_{\mathrm{th}}$ tracking technique can reduce switching loss and minimize the leakage current of D-GaN MIS-HEMT to sub-1 $\mu$ A. To suppress the electromagnetic interference (EMI) caused by the ringing voltage at drain of the GaN switch when reducing from 22 to 1.9 V, a Miller plateau (MP) detector and an EMI suppression frequency controller (ESFC) are also applied. With the slew rate (SR) control and fast-level shifter, the maximum switching frequency can reach up to 20 MHz, and $dV_{\mathrm{DS}}$ /dt can be regulated at 120 V/ns. In addition, the power saving mode of IBB converter and accurate ultralow power (ULP) under voltage lockout (UVLO) are proposed to reduce the quiescent current to 580 nA during standby mode, thereby enhances light load efficiency. The peak efficiency is as high as 95.8% and chip areas are 5.1 and 6.6 mm $^{2}$ .

AB - This article proposes an inverting buck-boost drive (IBBD) gallium nitride (GaN) driver, which directly drives depletion-mode GaN (D-GaN) metal–insulator–semiconductor high-electron-mobility transistor (MIS-HEMT). In the proposed driver fabricated with a 0.5- $\mu$ m CMOS process, the $V_{\mathrm{th}}$ tracking technique can reduce switching loss and minimize the leakage current of D-GaN MIS-HEMT to sub-1 $\mu$ A. To suppress the electromagnetic interference (EMI) caused by the ringing voltage at drain of the GaN switch when reducing from 22 to 1.9 V, a Miller plateau (MP) detector and an EMI suppression frequency controller (ESFC) are also applied. With the slew rate (SR) control and fast-level shifter, the maximum switching frequency can reach up to 20 MHz, and $dV_{\mathrm{DS}}$ /dt can be regulated at 120 V/ns. In addition, the power saving mode of IBB converter and accurate ultralow power (ULP) under voltage lockout (UVLO) are proposed to reduce the quiescent current to 580 nA during standby mode, thereby enhances light load efficiency. The peak efficiency is as high as 95.8% and chip areas are 5.1 and 6.6 mm $^{2}$ .

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KW - Electromagnetic interference

KW - Gallium nitride

KW - Gallium nitride (GaN)

KW - Leakage currents

KW - Logic gates

KW - Miller plateau (MP) voltage

KW - Switches

KW - Switching frequency

KW - Switching loss

KW - ultralow quiescent current

UR - http://www.scopus.com/inward/record.url?scp=85133657765&partnerID=8YFLogxK

U2 - 10.1109/JSSC.2022.3181792

DO - 10.1109/JSSC.2022.3181792

M3 - Article

AN - SCOPUS:85133657765

SN - 0018-9200

SP - 1

EP - 11

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

ER -

Wen YH, Wang TW, Yang TH, Hung SH, Zheng KL, Chen KH et al. A <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>10 to <inline-formula> <tex-math notation="LaTeX">$-$</tex-math> </inline-formula>20-V Inverting Buck-Boost Drive GaN Driver With Sub-1-<inline-formula> <tex-math notation="LaTeX">$\mu$</tex-math> </inline-formula>A Leakage Current <inline-formula> <tex-math notation="LaTeX">$V_{\mathrm{th}}$</tex-math> </inline-formula> Tracking Technique for 20-MHz Depletion-Mode GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors. IEEE Journal of Solid-State Circuits. 2022;1-11. doi: 10.1109/JSSC.2022.3181792

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