@inproceedings{3c9b798240614a458a9f936e8579fe17,
title = "A K-/Ka-band High-Power Single-Pole-Double-Throw Switch Featuring Absorptive Characteristic",
abstract = "A K-/Ka-band high-power single-pole-double-throw (SPDT) switch featuring absorptive characteristic for mobile satellite communication (SATCOM) phased arrays is presented in this work. Conventionally, the operating bandwidth of the absorptive RF switches were limited due to the adoption of two quarter-wavelength transmission lines for the reflective and absorptive branch. Through theoretical analysis, a wideband absorptive SPDT switch was realized using the 0.12-μm GaN/SiC high-electron mobility transistor (HEMT) technology. The experimental results have demonstrated an insertion loss of less than 3.2 dB, an isolation of greater than 26.2 dB, and an input 0.1-dB compression point (P0.1dB) of better than 32.6 dBm from the 17-30 GHz, respectively.",
keywords = "Absorptive, GaN, millimeter-wave, phased array, satellite communication (SATCOM), single-pole-double-throw (SPDT), switch",
author = "Luo, \{Hao Yu\} and Hsu, \{Heng Tung\} and Tsao, \{Yi Fan\}",
note = "Publisher Copyright: {\textcopyright} 2025 IEEE.; 2025 IEEE International Symposium on Circuits and Systems, ISCAS 2025 ; Conference date: 25-05-2025 Through 28-05-2025",
year = "2025",
doi = "10.1109/ISCAS56072.2025.11043901",
language = "English",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "ISCAS 2025 - IEEE International Symposium on Circuits and Systems, Proceedings",
address = "美國",
}