A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

Woei Cherng Wu; Tien-Sheng Chao; Wu Chin Peng; Wen Luh Yang; Jer Chyi Wang; Jian Hao Chen; Ming Wen Ma; Chao Sung Lai; Tsung Yu Yang; Tzu Ping Chen; Chien Hung Chen; Chih Hung Lin; Hwi Huang Chen; Joe Ko

doi:10.1109/VTSA.2007.378896

A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

Woei Cherng Wu^*, Tien-Sheng Chao, Wu Chin Peng, Wen Luh Yang, Jer Chyi Wang, Jian Hao Chen, Ming Wen Ma, Chao Sung Lai, Tsung Yu Yang, Tzu Ping Chen, Chien Hung Chen, Chih Hung Lin, Hwi Huang Chen, Joe Ko

^*Corresponding author for this work

Department of Electrophysics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well V_th distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.

Original language	English
Title of host publication	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers
DOIs	https://doi.org/10.1109/VTSA.2007.378896
State	Published - 2007
Event	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan Duration: 23 Apr 2007 → 25 Apr 2007

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/Territory	Taiwan
City	Hsinchu
Period	23/04/07 → 25/04/07

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10.1109/VTSA.2007.378896

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Wu, W. C., Chao, T.-S., Peng, W. C., Yang, W. L., Wang, J. C., Chen, J. H., Ma, M. W., Lai, C. S., Yang, T. Y., Chen, T. P., Chen, C. H., Lin, C. H., Chen, H. H., & Ko, J. (2007). A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. In 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers Article 4239464 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2007.378896

Wu, Woei Cherng ; Chao, Tien-Sheng ; Peng, Wu Chin et al. / A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{008e0ffb323b47e1a19f239478e5e544,

title = "A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness",

abstract = "High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well Vth distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.",

author = "Wu, {Woei Cherng} and Tien-Sheng Chao and Peng, {Wu Chin} and Yang, {Wen Luh} and Wang, {Jer Chyi} and Chen, {Jian Hao} and Ma, {Ming Wen} and Lai, {Chao Sung} and Yang, {Tsung Yu} and Chen, {Tzu Ping} and Chen, {Chien Hung} and Lin, {Chih Hung} and Chen, {Hwi Huang} and Joe Ko",

year = "2007",

doi = "10.1109/VTSA.2007.378896",

language = "English",

isbn = "1424405858",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

booktitle = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 23-04-2007 Through 25-04-2007",

}

Wu, WC, Chao, T-S, Peng, WC, Yang, WL, Wang, JC, Chen, JH, Ma, MW, Lai, CS, Yang, TY, Chen, TP, Chen, CH, Lin, CH, Chen, HH & Ko, J 2007, A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. in 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers., 4239464, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, 23/04/07. https://doi.org/10.1109/VTSA.2007.378896

A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. / Wu, Woei Cherng; Chao, Tien-Sheng; Peng, Wu Chin et al.
2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239464 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

AU - Wu, Woei Cherng

AU - Chao, Tien-Sheng

AU - Peng, Wu Chin

AU - Yang, Wen Luh

AU - Wang, Jer Chyi

AU - Chen, Jian Hao

AU - Ma, Ming Wen

AU - Lai, Chao Sung

AU - Yang, Tsung Yu

AU - Chen, Tzu Ping

AU - Chen, Chien Hung

AU - Lin, Chih Hung

AU - Chen, Hwi Huang

AU - Ko, Joe

PY - 2007

Y1 - 2007

N2 - High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well Vth distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.

AB - High-performance wrapped-select-gate (WSG) SONOS (silicon-oxide-nitride- silicon) memory cells with multi-level and 2-bit/cell operation have been successfully demonstrated. The source-side injection mechanism with different ONO thickness in WSG-SONOS memory was well investigated. The different programming efficiency of the WSG-SONOS memory with different ONO thickness can be explained by the lateral electrical field extracted from the simulation. Furthermore, multi-level storage is easily obtained and well Vth distribution is also presented. High program/erase speed (10us/5ms) and low programming current (3.5uA) are performed to achieve the multi-level operation with excellent gate and drain disturbance, second-bit effect, data retention and endurance.

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U2 - 10.1109/VTSA.2007.378896

DO - 10.1109/VTSA.2007.378896

M3 - Conference contribution

AN - SCOPUS:34548863353

SN - 1424405858

SN - 9781424405855

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

BT - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers

T2 - 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 23 April 2007 through 25 April 2007

ER -

Wu WC, Chao TS, Peng WC, Yang WL, Wang JC, Chen JH et al. A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness. In 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Proceedings of Technical Papers. 2007. 4239464. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2007.378896

A highly reliable multi-level and 2-bit/cell operation of wrapped-select-gate (WSG) SONOS memory with optimized ONO thickness

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