A High Survivability Low-Noise Amplifier for V-band Applications

Yi Fan Tsao, Yuan Wang, Ping Hsun Chiu, Heng Tung Hsu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, we report a GaN-based low-noise amplifier (LNA) with high survivability targeting for V-band applications. This LNA was measured to deliver a small-signal gain of 23.5 dB and a noise figure (NF) of 3.3 dB at 60 GHz. The ruggedness of the LNA was investigated experimentally by injecting continuous wave (CW) signal at the input port with various power levels and durations. While stressing up to the input level of 25.1 dBm at 60 GHz for 16 hours, the LNA showed a 1.5-dB decrease in linear gain, and 0.3-dB increase in noise figure. The experimental results have demonstrated a great potential for the proposed LNA to be implemented in highly-reliable systems targeting for operation at V-band frequencies.

Original languageEnglish
Title of host publicationProceedings - 2022 RFM IEEE International RF and Microwave Conference, RFM 2022
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665489775
DOIs
StatePublished - 2022
Event9th RFM IEEE International RF and Microwave Conference, RFM 2022 - Kuala Lumpur, Malaysia
Duration: 19 Dec 202221 Dec 2022

Publication series

NameProceedings - 2022 RFM IEEE International RF and Microwave Conference, RFM 2022

Conference

Conference9th RFM IEEE International RF and Microwave Conference, RFM 2022
Country/TerritoryMalaysia
CityKuala Lumpur
Period19/12/2221/12/22

Keywords

  • GaN-on-SiC
  • low-noise amplifier (LNA)
  • RF stress
  • survivability
  • V-band

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