@inproceedings{f9d528708f154b78b8283f5424bde39d,
title = "A High-Power Absorptive-Type Asymmetric SPDT Switch for Millimeter-wave Phased-Array Transceiver Front-End",
abstract = "The asymmetric single-pole-double-throw (SPDT) switch is a popular component in time-division duplex (TDD) RF front-end transceivers. In the conventional reflected-type configurations, potential internal reflection may be an issue when switching between the transmitting (Tx) and the receiving (Rx) modes, due to the fact that the Tx power amplifier is connected to the highly mismatched load during Rx operation. In this paper, the high power absorptive-type asymmetric SPDT switch is thus developed for 5G new-radio (NR) frequency range 2 (FR2) n257 band applications. Implemented in the 0.15-μm GaAs pseudomorphic high-electron-mobility transistor (pHEMT) technology, the experimental results demonstrated an insertion loss of less than 3.4/1.8 dB, an isolation of better than 17.9/18.1 dB, and an input 0.1-dB compression point (P0.1dB) of 30.0/22.0 dBm from 24-30 GHz while operating in Tx/Rx mode. Compared to the conventional asymmetric configurations, the proposed one offered a better isolation with lower insertion loss in the Rx mode.",
keywords = "5G New-Radio (NR), Asymmetric, GaAs, absorptive, phased array, single-pole-double-throw (SPDT), switch",
author = "Tsao, \{Yi Fan\} and Chen, \{Yi Hua\} and Hsu, \{Heng Tung\}",
note = "Publisher Copyright: {\textcopyright} 2026 IEEE.; 2026 IEEE International Symposium on Circuits and Systems, ISCAS 2026 ; Conference date: 24-05-2026 Through 27-05-2026",
year = "2026",
doi = "10.1109/ISCAS66217.2026.11562621",
language = "English",
series = "Proceedings - IEEE International Symposium on Circuits and Systems",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3960--3964",
booktitle = "ISCAS 2026 - 2026 IEEE International Symposium on Circuits and Systems",
address = "美國",
}