A high performance transparent resistive switching memory made from ZrO 2 /AlON bilayer structure

Tsung Ling Tsai, Hsiang Yu Chang, Jesse Jen Chung Lou, Tseung-Yuen Tseng

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In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO 2 )/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO 2 /ITO single layer device, the ITO/ZrO 2 /AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO 2 /AlON interface. Therefore, in the ITO/ZrO 2 /AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

Original languageEnglish
Article number153505
JournalApplied Physics Letters
Issue number15
StatePublished - 11 Apr 2016


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