A high performance transparent resistive switching memory made from ZrO 2 /AlON bilayer structure

Tsung Ling Tsai; Hsiang Yu Chang; Jesse Jen Chung Lou; Tseung-Yuen Tseng

doi:10.1063/1.4946006

A high performance transparent resistive switching memory made from ZrO ₂ /AlON bilayer structure

Tsung Ling Tsai, Hsiang Yu Chang, Jesse Jen Chung Lou, Tseung-Yuen Tseng

Institute of Electronics

Research output: Contribution to journal › Article › peer-review

57 Scopus citations

Abstract

In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO₂)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO₂/ITO single layer device, the ITO/ZrO₂/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO₂/AlON interface. Therefore, in the ITO/ZrO₂/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

Original language	English
Article number	153505
Journal	Applied Physics Letters
Volume	108
Issue number	15
DOIs	https://doi.org/10.1063/1.4946006
State	Published - 11 Apr 2016

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title = "A high performance transparent resistive switching memory made from ZrO 2 /AlON bilayer structure",

abstract = "In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO2/ITO single layer device, the ITO/ZrO2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO2/AlON interface. Therefore, in the ITO/ZrO2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.",

author = "Tsai, {Tsung Ling} and Chang, {Hsiang Yu} and Lou, {Jesse Jen Chung} and Tseung-Yuen Tseng",

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AU - Tsai, Tsung Ling

AU - Chang, Hsiang Yu

AU - Lou, Jesse Jen Chung

AU - Tseng, Tseung-Yuen

PY - 2016/4/11

Y1 - 2016/4/11

N2 - In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO2/ITO single layer device, the ITO/ZrO2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO2/AlON interface. Therefore, in the ITO/ZrO2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

AB - In this study, the switching properties of an indium tin oxide (ITO)/zirconium oxide (ZrO2)/ITO single layer device and those of a device with an aluminum oxynitride (AlON) layer were investigated. The devices with highly transparent characteristics were fabricated. Compared with the ITO/ZrO2/ITO single layer device, the ITO/ZrO2/AlON/ITO bilayer device exhibited a larger ON/OFF ratio, higher endurance performance, and superior retention properties by using a simple two-step forming process. These substantial improvements in the resistive switching properties were attributed to the minimized influence of oxygen migration through the ITO top electrode (TE), which can be realized by forming an asymmetrical conductive filament with the weakest part at the ZrO2/AlON interface. Therefore, in the ITO/ZrO2/AlON/ITO bilayer device, the regions where conductive filament formation and rupture occur can be effectively moved from the TE interface to the interior of the device.

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A high performance transparent resistive switching memory made from ZrO ₂ /AlON bilayer structure

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