A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics

Xiongfei Yu; Chunxiang Zhu; Hang Hu; Albert Chin; M. F. Li; Byung Jin Cho; Dim Lee Kwong; P. D. Foo; Ming Bin Yu

doi:10.1109/LED.2002.808159

A high-density MIM capacitor (13 fF/μm²) using ALD HfO₂ dielectrics

Xiongfei Yu^*, Chunxiang Zhu, Hang Hu, Albert Chin, M. F. Li, Byung Jin Cho, Dim Lee Kwong, P. D. Foo, Ming Bin Yu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

147 Scopus citations

Abstract

Metal-insulator-metal (MIM) capacitors with a different thickness of HfO₂ have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO₂ thickness. In addition, it is also found that the VCCs decrease logarithmically with increasing the thickness of HfO₂. Furthermore, the MIM capacitor with 10-nm HfO₂ shows a record high capacitance density of 13 fF/μm² and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 × 10^-8A/cm² at room temperature at 1 V, low tangent values below 0.05, and a small frequency dependence as well. All these indicate that it is very suitable for use in silicon integrated circuit applications.

Original language	English
Pages (from-to)	63-65
Number of pages	3
Journal	Ieee Electron Device Letters
Volume	24
Issue number	2
DOIs	https://doi.org/10.1109/LED.2002.808159
State	Published - Feb 2003

Keywords

Frequency dependency
High capacitance density
Metal-insulator-metal (MIM) capacitor
Thin-film devices
Voltage coefficient of capacitance (VCC)

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10.1109/LED.2002.808159

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title = "A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics",

abstract = "Metal-insulator-metal (MIM) capacitors with a different thickness of HfO2 have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. In addition, it is also found that the VCCs decrease logarithmically with increasing the thickness of HfO2. Furthermore, the MIM capacitor with 10-nm HfO2 shows a record high capacitance density of 13 fF/μm2 and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 × 10-8A/cm2 at room temperature at 1 V, low tangent values below 0.05, and a small frequency dependence as well. All these indicate that it is very suitable for use in silicon integrated circuit applications.",

keywords = "Frequency dependency, High capacitance density, Metal-insulator-metal (MIM) capacitor, Thin-film devices, Voltage coefficient of capacitance (VCC)",

author = "Xiongfei Yu and Chunxiang Zhu and Hang Hu and Albert Chin and Li, {M. F.} and Cho, {Byung Jin} and Kwong, {Dim Lee} and Foo, {P. D.} and Yu, {Ming Bin}",

year = "2003",

month = feb,

doi = "10.1109/LED.2002.808159",

language = "English",

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pages = "63--65",

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T1 - A high-density MIM capacitor (13 fF/μm2) using ALD HfO2 dielectrics

AU - Yu, Xiongfei

AU - Zhu, Chunxiang

AU - Hu, Hang

AU - Chin, Albert

AU - Li, M. F.

AU - Cho, Byung Jin

AU - Kwong, Dim Lee

AU - Foo, P. D.

AU - Yu, Ming Bin

PY - 2003/2

Y1 - 2003/2

N2 - Metal-insulator-metal (MIM) capacitors with a different thickness of HfO2 have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. In addition, it is also found that the VCCs decrease logarithmically with increasing the thickness of HfO2. Furthermore, the MIM capacitor with 10-nm HfO2 shows a record high capacitance density of 13 fF/μm2 and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 × 10-8A/cm2 at room temperature at 1 V, low tangent values below 0.05, and a small frequency dependence as well. All these indicate that it is very suitable for use in silicon integrated circuit applications.

AB - Metal-insulator-metal (MIM) capacitors with a different thickness of HfO2 have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. In addition, it is also found that the VCCs decrease logarithmically with increasing the thickness of HfO2. Furthermore, the MIM capacitor with 10-nm HfO2 shows a record high capacitance density of 13 fF/μm2 and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 × 10-8A/cm2 at room temperature at 1 V, low tangent values below 0.05, and a small frequency dependence as well. All these indicate that it is very suitable for use in silicon integrated circuit applications.

KW - Frequency dependency

KW - High capacitance density

KW - Metal-insulator-metal (MIM) capacitor

KW - Thin-film devices

KW - Voltage coefficient of capacitance (VCC)

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JO - Ieee Electron Device Letters

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ER -

A high-density MIM capacitor (13 fF/μm²) using ALD HfO₂ dielectrics

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Keywords

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