A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch

Sheng Hsi Hung; Tz Wun Wang; Si Yi Li; Wei Chien Hung; Ya Ting Hsu; Ke Horng Chen; Kuo Lin Zheng; Ying Hsi Lin; Shian Ru Lin; Tsung Yen Tsai

doi:10.1109/JSSC.2024.3386880

A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch

Sheng Hsi Hung, Tz Wun Wang, Si Yi Li, Wei Chien Hung, Ya Ting Hsu, Ke Horng Chen^*, Kuo Lin Zheng, Ying Hsi Lin, Shian Ru Lin, Tsung Yen Tsai

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This article proposes a gallium nitride (GaN)-based isolated silicon carbide (SiC) MOSFET gate driver with an on-chip metal-insulator-metal (MIM) capacitor that has high data rate and low propagation delay. The improved common-mode transient immunity (CMTI) envelope detection technique eliminates the common-mode current (I_CM) to improve the CMTI. In addition, the proposed isolated gate driver (IGD) with quad-drive control (QDC) technique reduces power loss and gate ringing effect. Experimental results show that the proposed IGD can achieve a slew rate of 109 kV/μs. At a switching frequency of 100 kHz, the efficiency of the half-bridge isolated dc-dc converter can be kept higher than 90% when V_IN changes from 800 to 1700 V, and the peak efficiency is 98.6% when V_IN = 800 V.

Original language	English
Pages (from-to)	2581-2590
Number of pages	10
Journal	IEEE Journal of Solid-State Circuits
Volume	59
Issue number	8
DOIs	https://doi.org/10.1109/JSSC.2024.3386880
State	Published - 2024

Keywords

Improved common-mode transient immunity (CMTI) envelope detection technique
SiC power switch
isolated gate driver (IGD)
quad drive control (QDC) technique
silicon carbide (SiC)

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10.1109/JSSC.2024.3386880

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@article{d83ca0b7e2454b028128247b3589fd2c,

title = "A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch",

abstract = "This article proposes a gallium nitride (GaN)-based isolated silicon carbide (SiC) MOSFET gate driver with an on-chip metal-insulator-metal (MIM) capacitor that has high data rate and low propagation delay. The improved common-mode transient immunity (CMTI) envelope detection technique eliminates the common-mode current (ICM) to improve the CMTI. In addition, the proposed isolated gate driver (IGD) with quad-drive control (QDC) technique reduces power loss and gate ringing effect. Experimental results show that the proposed IGD can achieve a slew rate of 109 kV/μs. At a switching frequency of 100 kHz, the efficiency of the half-bridge isolated dc-dc converter can be kept higher than 90% when VIN changes from 800 to 1700 V, and the peak efficiency is 98.6% when VIN = 800 V.",

keywords = "Improved common-mode transient immunity (CMTI) envelope detection technique, SiC power switch, isolated gate driver (IGD), quad drive control (QDC) technique, silicon carbide (SiC)",

author = "Hung, {Sheng Hsi} and Wang, {Tz Wun} and Li, {Si Yi} and Hung, {Wei Chien} and Hsu, {Ya Ting} and Chen, {Ke Horng} and Zheng, {Kuo Lin} and Lin, {Ying Hsi} and Lin, {Shian Ru} and Tsai, {Tsung Yen}",

note = "Publisher Copyright: {\textcopyright} 1966-2012 IEEE.",

year = "2024",

doi = "10.1109/JSSC.2024.3386880",

language = "English",

volume = "59",

pages = "2581--2590",

journal = "IEEE Journal of Solid-State Circuits",

issn = "0018-9200",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch

AU - Hung, Sheng Hsi

AU - Wang, Tz Wun

AU - Li, Si Yi

AU - Hung, Wei Chien

AU - Hsu, Ya Ting

AU - Chen, Ke Horng

AU - Zheng, Kuo Lin

AU - Lin, Ying Hsi

AU - Lin, Shian Ru

AU - Tsai, Tsung Yen

PY - 2024

Y1 - 2024

N2 - This article proposes a gallium nitride (GaN)-based isolated silicon carbide (SiC) MOSFET gate driver with an on-chip metal-insulator-metal (MIM) capacitor that has high data rate and low propagation delay. The improved common-mode transient immunity (CMTI) envelope detection technique eliminates the common-mode current (ICM) to improve the CMTI. In addition, the proposed isolated gate driver (IGD) with quad-drive control (QDC) technique reduces power loss and gate ringing effect. Experimental results show that the proposed IGD can achieve a slew rate of 109 kV/μs. At a switching frequency of 100 kHz, the efficiency of the half-bridge isolated dc-dc converter can be kept higher than 90% when VIN changes from 800 to 1700 V, and the peak efficiency is 98.6% when VIN = 800 V.

AB - This article proposes a gallium nitride (GaN)-based isolated silicon carbide (SiC) MOSFET gate driver with an on-chip metal-insulator-metal (MIM) capacitor that has high data rate and low propagation delay. The improved common-mode transient immunity (CMTI) envelope detection technique eliminates the common-mode current (ICM) to improve the CMTI. In addition, the proposed isolated gate driver (IGD) with quad-drive control (QDC) technique reduces power loss and gate ringing effect. Experimental results show that the proposed IGD can achieve a slew rate of 109 kV/μs. At a switching frequency of 100 kHz, the efficiency of the half-bridge isolated dc-dc converter can be kept higher than 90% when VIN changes from 800 to 1700 V, and the peak efficiency is 98.6% when VIN = 800 V.

KW - Improved common-mode transient immunity (CMTI) envelope detection technique

KW - SiC power switch

KW - isolated gate driver (IGD)

KW - quad drive control (QDC) technique

KW - silicon carbide (SiC)

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DO - 10.1109/JSSC.2024.3386880

M3 - Article

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SN - 0018-9200

VL - 59

SP - 2581

EP - 2590

JO - IEEE Journal of Solid-State Circuits

JF - IEEE Journal of Solid-State Circuits

IS - 8

ER -

A High Common-Mode Transient Immunity GaN-on-SOI Gate Driver With Quad-Drive Control Technique for High dV/dt 1700-V SiC Power Switch

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