A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology

Cheng Hung Hsieh; Tzu Chieh Hong; Chiung Yi Yang; Yi Ho Chen; Xin Ren Yu; Wen Hsiang Lu; Ricky W. Chuang; Zuo Min Tsai; Yao Jen Lee; Yi Ming Li; Wen Fa Wu; Tien Sheng Chao; Seiji Samukawa; Yeong Her Wang; Wen-Kuan Yeh; Jenn Hwan Tarng

doi:10.1109/LED.2022.3206604

A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology

Cheng Hung Hsieh, Tzu Chieh Hong, Chiung Yi Yang, Yi Ho Chen, Xin Ren Yu, Wen Hsiang Lu, Ricky W. Chuang, Zuo Min Tsai, Yao Jen Lee, Yi Ming Li, Wen Fa Wu, Tien Sheng Chao, Seiji Samukawa, Yeong Her Wang, Wen-Kuan Yeh, Jenn Hwan Tarng

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This study fabricated and verified a germanium (Ge) fin field-effect transistor (FinFET) on developed GeSOI platform. The Ge FinFETs were demonstrated for radio-frequency (RF) applications with a harmonic radar tag. The relation between the detection range (R_d), received power (P_r), and threshold voltage (V_th) of a diode was qualitatively discussed. To meet the requirement of a low V_th, two kinds of Ge FinFETs with different metal gates were fabricated and compared. After the evaluation of electrical characteristics of n-type and p-type Ge FinFETs with different fin numbers, a tag for harmonic radar was designed by integrating diode-connected TiN gate 1-fin Ge FinFETs (V_th = 0.1 V) with a high impedance antenna. The RF performance was evaluated at 9.4 GHz and 18.8 GHz. The results indicated a 50 % improvement in the R_d as compared to the tag using a commercial Schottky diode. Therefore, the proposed low-V_th Ge FinFET on developed GeSOI platform for complementary metal–oxide–semiconductor (CMOS) is promising for high-sensitivity harmonic radar applications.

Original language	English
Pages (from-to)	1798-1801
Number of pages	4
Journal	Ieee Electron Device Letters
Volume	43
Issue number	11
DOIs	https://doi.org/10.1109/LED.2022.3206604
State	Published - 1 Nov 2022

Keywords

CMOS
Ge FinFET
harmonic radar
tag

Access to Document

10.1109/LED.2022.3206604

Cite this

Hsieh, C. H., Hong, T. C., Yang, C. Y., Chen, Y. H., Yu, X. R., Lu, W. H., Chuang, R. W., Tsai, Z. M., Lee, Y. J., Li, Y. M., Wu, W. F., Chao, T. S., Samukawa, S., Wang, Y. H., Yeh, W.-K., & Tarng, J. H. (2022). A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology. Ieee Electron Device Letters, 43(11), 1798-1801. https://doi.org/10.1109/LED.2022.3206604

@article{498dfa1d4dc749bf9cf148f818e7232a,

title = "A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology",

abstract = "This study fabricated and verified a germanium (Ge) fin field-effect transistor (FinFET) on developed GeSOI platform. The Ge FinFETs were demonstrated for radio-frequency (RF) applications with a harmonic radar tag. The relation between the detection range (Rd), received power (Pr), and threshold voltage (Vth) of a diode was qualitatively discussed. To meet the requirement of a low Vth, two kinds of Ge FinFETs with different metal gates were fabricated and compared. After the evaluation of electrical characteristics of n-type and p-type Ge FinFETs with different fin numbers, a tag for harmonic radar was designed by integrating diode-connected TiN gate 1-fin Ge FinFETs (Vth = 0.1 V) with a high impedance antenna. The RF performance was evaluated at 9.4 GHz and 18.8 GHz. The results indicated a 50 % improvement in the Rd as compared to the tag using a commercial Schottky diode. Therefore, the proposed low-Vth Ge FinFET on developed GeSOI platform for complementary metal–oxide–semiconductor (CMOS) is promising for high-sensitivity harmonic radar applications.",

keywords = "CMOS, Ge FinFET, harmonic radar, tag",

author = "Hsieh, {Cheng Hung} and Hong, {Tzu Chieh} and Yang, {Chiung Yi} and Chen, {Yi Ho} and Yu, {Xin Ren} and Lu, {Wen Hsiang} and Chuang, {Ricky W.} and Tsai, {Zuo Min} and Lee, {Yao Jen} and Li, {Yi Ming} and Wu, {Wen Fa} and Chao, {Tien Sheng} and Seiji Samukawa and Wang, {Yeong Her} and Wen-Kuan Yeh and Tarng, {Jenn Hwan}",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.",

year = "2022",

month = nov,

day = "1",

doi = "10.1109/LED.2022.3206604",

language = "English",

volume = "43",

pages = "1798--1801",

journal = "Ieee Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology

AU - Hsieh, Cheng Hung

AU - Hong, Tzu Chieh

AU - Yang, Chiung Yi

AU - Chen, Yi Ho

AU - Yu, Xin Ren

AU - Lu, Wen Hsiang

AU - Chuang, Ricky W.

AU - Tsai, Zuo Min

AU - Lee, Yao Jen

AU - Li, Yi Ming

AU - Wu, Wen Fa

AU - Chao, Tien Sheng

AU - Samukawa, Seiji

AU - Wang, Yeong Her

AU - Yeh, Wen-Kuan

AU - Tarng, Jenn Hwan

PY - 2022/11/1

Y1 - 2022/11/1

N2 - This study fabricated and verified a germanium (Ge) fin field-effect transistor (FinFET) on developed GeSOI platform. The Ge FinFETs were demonstrated for radio-frequency (RF) applications with a harmonic radar tag. The relation between the detection range (Rd), received power (Pr), and threshold voltage (Vth) of a diode was qualitatively discussed. To meet the requirement of a low Vth, two kinds of Ge FinFETs with different metal gates were fabricated and compared. After the evaluation of electrical characteristics of n-type and p-type Ge FinFETs with different fin numbers, a tag for harmonic radar was designed by integrating diode-connected TiN gate 1-fin Ge FinFETs (Vth = 0.1 V) with a high impedance antenna. The RF performance was evaluated at 9.4 GHz and 18.8 GHz. The results indicated a 50 % improvement in the Rd as compared to the tag using a commercial Schottky diode. Therefore, the proposed low-Vth Ge FinFET on developed GeSOI platform for complementary metal–oxide–semiconductor (CMOS) is promising for high-sensitivity harmonic radar applications.

AB - This study fabricated and verified a germanium (Ge) fin field-effect transistor (FinFET) on developed GeSOI platform. The Ge FinFETs were demonstrated for radio-frequency (RF) applications with a harmonic radar tag. The relation between the detection range (Rd), received power (Pr), and threshold voltage (Vth) of a diode was qualitatively discussed. To meet the requirement of a low Vth, two kinds of Ge FinFETs with different metal gates were fabricated and compared. After the evaluation of electrical characteristics of n-type and p-type Ge FinFETs with different fin numbers, a tag for harmonic radar was designed by integrating diode-connected TiN gate 1-fin Ge FinFETs (Vth = 0.1 V) with a high impedance antenna. The RF performance was evaluated at 9.4 GHz and 18.8 GHz. The results indicated a 50 % improvement in the Rd as compared to the tag using a commercial Schottky diode. Therefore, the proposed low-Vth Ge FinFET on developed GeSOI platform for complementary metal–oxide–semiconductor (CMOS) is promising for high-sensitivity harmonic radar applications.

KW - CMOS

KW - Ge FinFET

KW - harmonic radar

KW - tag

UR - http://www.scopus.com/inward/record.url?scp=85139419250&partnerID=8YFLogxK

U2 - 10.1109/LED.2022.3206604

DO - 10.1109/LED.2022.3206604

M3 - Article

AN - SCOPUS:85139419250

SN - 0741-3106

VL - 43

SP - 1798

EP - 1801

JO - Ieee Electron Device Letters

JF - Ieee Electron Device Letters

IS - 11

ER -

A Harmonic Radar Tag With High Detection Range Utilizing Ge FinFETs CMOS Technology

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this