A GaN-based Doherty Power Amplifier for 5G Basestation Applications

Yi Fan Tsao, Heng Tung Hsu, Jiun Jie Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper presents a highly efficient and linear Doherty power amplifier targeting base station applications for the fifth-generation (5G) communication systems. With the adoption of self-packaged 0.25-μm GaN/SiC high-electron mobility transistors (HEMTs), a quasi-Doherty power amplifier (P A) featuring an operating frequency from 3.4-3.6 GHz was realized. The fabricated P A delivered a saturated output power Psat) of 50.5 dBm, and a peak power-added-efficiency (P AE) of 60.6% while excited by continuous-wave (CW) signal at 3.5 GHz, respectively.

Original languageEnglish
Title of host publication15th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2024 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages228-230
Number of pages3
ISBN (Electronic)9798350384956
DOIs
StatePublished - 2024
Event15th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2024 - Hong Kong, China
Duration: 20 May 202422 May 2024

Publication series

Name15th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2024 - Proceedings

Conference

Conference15th Global Symposium on Millimeter-Waves and Terahertz, GSMM 2024
Country/TerritoryChina
CityHong Kong
Period20/05/2422/05/24

Keywords

  • 5G
  • basestation
  • Doherty
  • Gallium nitride (GaN)
  • millimeter-wave

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