TY - GEN
T1 - A first-principles study on edge doping of armchair graphene nanoribbon
AU - Kai, Tak Lam
AU - Liang, Gengchiau
PY - 2008
Y1 - 2008
N2 - We present our ab initio calculations on the edge-doping effects of graphene nanoribbon (GNR) with hydrogen passivated armchair edges. Boron [Nitrogen] atoms are introduced to the GNR by substituting carbon atoms at the edges. Initial introduction of boron [nitrogen] atom decreases [increases] the Fermi level of the armchair GNR (AGNR), creating a p-type [n-type] semiconductor. Higher concentration of boron [nitrogen] atoms further decreases [increases] the Fermi level. Based on these observation, a p-i-n AGNR heterstructure is simulated and the transmission coefficient and current-voltage characteristic are also calculated.
AB - We present our ab initio calculations on the edge-doping effects of graphene nanoribbon (GNR) with hydrogen passivated armchair edges. Boron [Nitrogen] atoms are introduced to the GNR by substituting carbon atoms at the edges. Initial introduction of boron [nitrogen] atom decreases [increases] the Fermi level of the armchair GNR (AGNR), creating a p-type [n-type] semiconductor. Higher concentration of boron [nitrogen] atoms further decreases [increases] the Fermi level. Based on these observation, a p-i-n AGNR heterstructure is simulated and the transmission coefficient and current-voltage characteristic are also calculated.
UR - http://www.scopus.com/inward/record.url?scp=52649153155&partnerID=8YFLogxK
U2 - 10.1109/INEC.2008.4585448
DO - 10.1109/INEC.2008.4585448
M3 - Conference contribution
AN - SCOPUS:52649153155
SN - 9781424415731
T3 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
SP - 109
EP - 111
BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Y2 - 24 March 2008 through 27 March 2008
ER -