A first-principles study on edge doping of armchair graphene nanoribbon

Tak Lam Kai, Gengchiau Liang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We present our ab initio calculations on the edge-doping effects of graphene nanoribbon (GNR) with hydrogen passivated armchair edges. Boron [Nitrogen] atoms are introduced to the GNR by substituting carbon atoms at the edges. Initial introduction of boron [nitrogen] atom decreases [increases] the Fermi level of the armchair GNR (AGNR), creating a p-type [n-type] semiconductor. Higher concentration of boron [nitrogen] atoms further decreases [increases] the Fermi level. Based on these observation, a p-i-n AGNR heterstructure is simulated and the transmission coefficient and current-voltage characteristic are also calculated.

Original languageEnglish
Title of host publication2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages109-111
Number of pages3
DOIs
StatePublished - 2008
Event2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China
Duration: 24 Mar 200827 Mar 2008

Publication series

Name2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Conference

Conference2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Country/TerritoryChina
CityShanghai
Period24/03/0827/03/08

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