A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison

Todd G. Mckenzie; Yi-Ming Li

doi:10.1504/ijcse.2006.012766

A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison

Todd G. Mckenzie, Yi-Ming Li^*

^*Corresponding author for this work

Department of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This work presents a continuous, analytic drain-current model for symmetric DG PMOSFETs. The model is derived from the closed form solution of Poisson's equation and current continuity equation without the charge sheet approximation. The model is extended to include the mobility degradation effect. In addition, a fast solver is presented which determines drain current to within a user-defined accuracy. The new model is fit to hardware, and I-V curves comparing the analytic model to experimental data are shown.

Original language	English
Pages (from-to)	144-147
Number of pages	4
Journal	International Journal of Computational Science and Engineering
Volume	2
Issue number	3-4
DOIs	https://doi.org/10.1504/ijcse.2006.012766
State	Published - 2006

Keywords

Analytical model
Calibration
DG MOSFET
Drain current model
Simultation

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10.1504/ijcse.2006.012766

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abstract = "This work presents a continuous, analytic drain-current model for symmetric DG PMOSFETs. The model is derived from the closed form solution of Poisson's equation and current continuity equation without the charge sheet approximation. The model is extended to include the mobility degradation effect. In addition, a fast solver is presented which determines drain current to within a user-defined accuracy. The new model is fit to hardware, and I-V curves comparing the analytic model to experimental data are shown.",

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AB - This work presents a continuous, analytic drain-current model for symmetric DG PMOSFETs. The model is derived from the closed form solution of Poisson's equation and current continuity equation without the charge sheet approximation. The model is extended to include the mobility degradation effect. In addition, a fast solver is presented which determines drain current to within a user-defined accuracy. The new model is fit to hardware, and I-V curves comparing the analytic model to experimental data are shown.

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KW - Calibration

KW - DG MOSFET

KW - Drain current model

KW - Simultation

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A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison

Abstract

Keywords

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